-
公开(公告)号：US20110073136A1
公开(公告)日：2011-03-31
申请号：US12878556
申请日：2010-09-09
IPC分类号： B08B7/00
CPC分类号： C23C16/4405 , H01J37/32357 , H01J37/32862
摘要： Methods of removing gallium and gallium-containing materials from surfaces within a substrate processing chamber using a cleaning mixture are described. The cleaning mixture contains an iodine-containing compound and is introduced into the processing chamber. Iodine reacts with gallium resident within the chamber to produce thermally volatile Gal3. The Gal3 is removed using the exhaust system of the chamber by raising the temperature of the desorbing surface. Other volatile gallium-containing by-products may also be formed and removed from the exhaust system.
摘要翻译： 描述了使用清洁混合物从衬底处理室内的表面去除镓和镓的材料的方法。 清洁混合物含有含碘化合物并被引入处理室。 碘与驻留在室内的镓反应以产生热挥发性Gal 3。 通过提高解吸表面的温度，使用室的排气系统去除Gal 3。 也可以从排气系统形成和除去其它挥发性含镓副产物。
-
公开(公告)号：US20110059617A1
公开(公告)日：2011-03-10
申请号：US12878171
申请日：2010-09-09
申请人： Glenn Mitchell , Robert Torres, JR. , Adam Seymour
发明人： Glenn Mitchell , Robert Torres, JR. , Adam Seymour
IPC分类号： H01L21/3065
CPC分类号： C23C16/4405 , H01J37/32357 , H01J37/32862
摘要： Methods of etching high-aspect-ratio features in dielectric materials such as silicon oxide are described. The methods may include a concurrent introduction of a fluorocarbon precursor and an iodo-fluorocarbon precursor into a substrate processing system housing a substrate. The fluorocarbon precursor may have a F:C atomic ratio of about 2:1 or less, and the iodo-fluorocarbon may have a F:C ratio of about 1.75:1 to about 1.5:1. Exemplary precursors may include C4F6, C5F8 and C2F3I, among others. The substrate processing system may be configured to allow creation of a plasma useful for accelerating ions created in the plasma toward the substrate. The substrate may have regions of exposed silicon oxide and an overlying patterned photoresist layer which exposes narrow regions of silicon oxide. The etch process may remove the silicon oxide to a significant depth while maintaining a relatively constant width down the trench.
摘要翻译： 描述了蚀刻介电材料如氧化硅中的高纵横比特征的方法。 所述方法可以包括将碳氟前体和碘 - 碳氟化合物前体同时引入到容纳衬底的衬底处理系统中。 碳氟化合物前体可以具有约2:1或更低的F:C原子比，并且碘代氟碳可以具有约1.75:1至约1.5:1的F:C比。 示例性前体可以包括C4F6，C5F8和C2F3I等。 衬底处理系统可以被配置为允许产生用于将在等离子体中产生的离子加速到衬底的等离子体。 衬底可以具有暴露的氧化硅的区域和暴露氧化硅的窄区域的上覆图案化的光刻胶层。 蚀刻工艺可以将氧化硅移除到显着的深度，同时保持沟槽相对恒定的宽度。
-
公开(公告)号：US20110056515A1
公开(公告)日：2011-03-10
申请号：US12878195
申请日：2010-09-09
申请人： Glenn Mitchell , Robert Torres, JR. , Adam Seymour
发明人： Glenn Mitchell , Robert Torres, JR. , Adam Seymour
IPC分类号： B08B7/00
CPC分类号： C23C16/4405 , H01J37/32357 , H01J37/32862
摘要： Methods of cleaning a processing chamber with nitrogen trifluoride (NF3) are described. The methods involve a concurrent introduction of nitrogen trifluoride and a reactive diluent into the chamber. The NF3 may be excited in a plasma inside the chamber or in a remote plasma region upstream from the chamber. The reactive diluent may be introduced upstream or downstream of the remote plasma such that both NF3 and the reactive diluent (and any plasma-generated effluents) are present in the chamber during cleaning. The presence of the reactive diluent enhances the chamber-cleaning effectiveness of the NF3.
摘要翻译： 描述了用三氟化氮（NF 3）清洁处理室的方法。 该方法涉及将三氟化氮和反应性稀释剂同时引入室中。 NF3可以在室内的等离子体中或在室的上游的远程等离子体区域中被激发。 反应性稀释剂可以在远程等离子体的上游或下游引入，使得NF 3和反应性稀释剂（和任何等离子体产生的流出物）在清洁期间存在于室中。 反应性稀释剂的存在增强了NF3的室清洁效果。
-
公开(公告)号：US20100159187A1
公开(公告)日：2010-06-24
申请号：US11547543
申请日：2005-03-29
CPC分类号： B27D5/00 , B27G11/00 , Y10T156/1092 , Y10T428/24066
摘要： A system (10) for laminating a plurality of veneer layers (14, 18) is disclosed. The system (10) comprises a base veneer layer roll (12) carrying a base veneer layer (14) and at least one additional roll (16) carrying at least one additional veneer layer (18) that is to be laminated to the base veneer layer (14). Guiding means (24, 28) is provided for guiding the two layers (14, 18) towards each other, with a pair of adjacent laminating rollers (30, 32) being arranged to receive the base veneer layer (14) and the additional veneer layer (18) therebetween, so as to continuously laminate the two layers (14, 18) as they move through the laminating rollers (30, 32). Preferably, the additional veneer layer (18) is impregnated with heat-activatable glue, with the system (10) further including a bank of heating elements (40) arranged to activate the glue on the additional veneer layer (18).
摘要翻译： 公开了一种用于层叠多个单板层（14,18）的系统（10）。 系统（10）包括承载底部单板层（14）的基底单板层辊（12）和至少一个另外的辊（16），所述至少一个附加辊承载至少一个另外的薄板层（18） 层（14）。 提供引导装置（24,28），用于将两层（14,18）彼此引导，一对相邻的层压辊（30,32）被布置成接收底层单板层（14）和附加单板 层（18,18），以便当它们移动通过层压辊（30,32）时，使两层（14,18）连续层压。 优选地，附加的薄板层（18）浸渍有可热激活的胶水，系统（10）还包括一组加热元件（40），其被布置成激活附加单板层（18）上的胶水。
-
公开(公告)号：USD474209S1
公开(公告)日：2003-05-06
申请号：US29151540
申请日：2001-12-07
-
公开(公告)号：USD472482S1
公开(公告)日：2003-04-01
申请号：US29158969
申请日：2002-04-15
申请人： Adam Seymour , Jaroslaw Bras
设计人： Adam Seymour , Jaroslaw Bras
-
公开(公告)号：US08623148B2
公开(公告)日：2014-01-07
申请号：US12878195
申请日：2010-09-09
申请人： Glenn Mitchell , Robert Torres, Jr. , Adam Seymour
发明人： Glenn Mitchell , Robert Torres, Jr. , Adam Seymour
IPC分类号： B08B9/00
CPC分类号： C23C16/4405 , H01J37/32357 , H01J37/32862
摘要： Methods of cleaning a processing chamber with nitrogen trifluoride (NF3) are described. The methods involve a concurrent introduction of nitrogen trifluoride and a reactive diluent into the chamber. The NF3 may be excited in a plasma inside the chamber or in a remote plasma region upstream from the chamber. The reactive diluent may be introduced upstream or downstream of the remote plasma such that both NF3 and the reactive diluent (and any plasma-generated effluents) are present in the chamber during cleaning. The presence of the reactive diluent enhances the chamber-cleaning effectiveness of the NF3.
摘要翻译： 描述了用三氟化氮（NF 3）清洁处理室的方法。 该方法涉及将三氟化氮和反应性稀释剂同时引入室中。 NF3可以在室内的等离子体中或在室的上游的远程等离子体区域中被激发。 反应性稀释剂可以在远程等离子体的上游或下游引入，使得NF 3和反应性稀释剂（和任何等离子体产生的流出物）在清洁期间存在于室中。 反应性稀释剂的存在增强了NF3的室清洁效果。
-
公开(公告)号：USD501415S1
公开(公告)日：2005-02-01
申请号：US29195959
申请日：2003-12-22
申请人： Adam Seymour
设计人： Adam Seymour
-
公开(公告)号：USD482373S1
公开(公告)日：2003-11-18
申请号：US29167890
申请日：2002-09-24
-
-
-
-
-
-
-
-
搜索结果
9 条记录 (耗时 0.016 秒)
