公开(公告)号：US20240297022A1

公开(公告)日：2024-09-05

申请号：US18364233

申请日：2023-08-02

Applicant: Applied Materials, Inc.

Inventor： Hansel LO ,  Erika HANSEN ,  Christopher S. OLSEN

IPC: H01J37/32 ,  C04B35/584 ,  C04B41/45 ,  C04B41/50 ,  C04B41/87

CPC classification number: H01J37/32449 ,  C04B35/584 ,  C04B41/4533 ,  C04B41/4556 ,  C04B41/5035 ,  C04B41/87 ,  H01J37/32357 ,  H01J37/32926 ,  H01J2237/338

Abstract: The disclosure provides system, computer readable medium, and method for producing a hydroxyl radical. A plasma of a plasma gas is formed, via a controller, using a remote plasma source fluidly coupled to a gas inlet conduit coupled to a first nozzle of a processing chamber. A first gas radical is produced by flowing a first gas from a first gas source through the remote plasma source. The first gas radical is introduced into the processing chamber using the gas inlet conduit coupled to the first nozzle. A second gas from a second gas source is introduced using a plurality of second nozzles fluidly of the processing chamber. An oxidation radical is produced by mixing the first gas radical and the second gas in the processing chamber.

公开(公告)号：US12075554B2

公开(公告)日：2024-08-27

申请号：US17237913

申请日：2021-04-22

Applicant: MKS Instruments, Inc.

Inventor： Xing Chen ,  Ilya Pokidov ,  Atul Gupta

IPC: H05H1/46 ,  H01J37/32

CPC classification number: H05H1/46 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32467 ,  H01J37/32522

Abstract: A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.

公开(公告)号：US12062526B2

公开(公告)日：2024-08-13

申请号：US17077934

申请日：2020-10-22

Applicant: Applied Materials, Inc.

Inventor： Viren Kalsekar

IPC: H01L21/677 ,  H01J37/32

CPC classification number: H01J37/32743 ,  H01J37/32357 ,  H01J37/32715 ,  H01L21/67703

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body along a first surface of the lid plate. The lid plate may define a plurality of apertures through the lid plate. The lid plate may further define a recess about each aperture of the plurality of apertures in the first surface of the lid plate. Each recess may extend partially through a thickness of the lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. Each recess may receive at least a portion of one of the lid stacks of the plurality of lid stacks. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region.

公开(公告)号：US20240241448A1

公开(公告)日：2024-07-18

申请号：US18531191

申请日：2023-12-06

Applicant: Gigaphoton Inc.

Inventor： Atsushi UEDA

IPC: G03F7/00 ,  H01J37/32

CPC classification number: G03F7/70033 ,  G03F7/7015 ,  G03F7/7095 ,  H01J37/32357 ,  H01J37/32449

Abstract: An extreme ultraviolet light generation chamber device includes a chamber including a plasma generation region in which plasma is generated from a droplet target of tin irradiated with laser light; a gas supply port supplying an etching gas containing hydrogen to the internal space; a cylindrical partition wall surrounding the plasma generation region, and having an opening on the internal space side as an inlet port of a gas and an opening at the outside of the chamber as an exhaust port of the gas; an exhaust device; and a concentrating mirror. The partition wall has an inner circumferential surface on which tin is more likely to be deposited on a downstream side of a predetermined position on a downstream side of the plasma generation region in a flow direction of the gas inside the partition wall than on an upstream side of the predetermined position.

公开(公告)号：US20240234101A1

公开(公告)日：2024-07-11

申请号：US18613512

申请日：2024-03-22

Applicant: INNOVATION FOR CREATIVE DEVICES CO., LTD.

Inventor： Buil JEON ,  Taeho SHIN ,  Dooho LIM ,  Jungsu PARK ,  Bumsoo ON ,  Seungho LEE

IPC: H01J37/32

CPC classification number: H01J37/32633 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32357 ,  H01J2237/0203 ,  H01J2237/3343

Abstract: A plasma substrate treatment apparatus according to one embodiment of the present invention comprises: a remote plasma generator for generating plasma and an active species; an upper chamber having an opening connected to an output port of the remote plasma generator and receiving and diffusing the active species of the remote plasma generator; a first baffle disposed on the opening of the upper chamber; a lower chamber receiving the diffused active species from the upper chamber; a second baffle partitioning the upper chamber and the lower chamber and transmitting the active species; a substrate holder for supporting a substrate disposed in the lower chamber; and an RF power source applying RF power to the substrate holder.

公开(公告)号：US20240218509A1

公开(公告)日：2024-07-04

申请号：US18427691

申请日：2024-01-30

Applicant: Lam Research Corporation

Inventor： Bhadri N. VARADARAJAN ,  Bo GONG ,  Rachel E. BATZER ,  Huatan QIU ,  Bart J. VAN SCHRAVENDIJK ,  Geoffrey HOHN

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  C23C16/458 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32

CPC classification number: C23C16/45525 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/32486

Abstract: Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates. The apparatus may be configured to cause formation and reconditioning of the low recombination material coating.

公开(公告)号：US12027354B2

公开(公告)日：2024-07-02

申请号：US17861421

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Jothilingam Ramalingam ,  Yong Cao ,  Ilya Lavitsky ,  Keith A. Miller ,  Tza-Jing Gung ,  Xianmin Tang ,  Shane Lavan ,  Randy D Schmieding ,  John C. Forster ,  Kirankumar Neelasandra Savandaiah

IPC: H01J37/32 ,  C23C14/54 ,  C23C14/56 ,  H01J37/34

CPC classification number: H01J37/3488 ,  C23C14/54 ,  C23C14/564 ,  H01J37/32357 ,  H01J37/32862 ,  H01J37/3435 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/32091

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

公开(公告)号：US12002658B2

公开(公告)日：2024-06-04

申请号：US17598783

申请日：2020-03-26

Applicant: Lam Research Corporation

Inventor： Sreeram Sonti

IPC: H01J37/32 ,  G01M3/16 ,  G01M3/18 ,  G08B21/20

CPC classification number: H01J37/32522 ,  G01M3/165 ,  G01M3/186 ,  G08B21/20 ,  H01J37/32724 ,  H01J37/32807 ,  H01J37/3288 ,  H01J37/32357

Abstract: In one embodiment, the disclosed apparatus is a process cooling-water isolation system used in a process tool. The system includes an isolation valve coupled between a water supply and an inlet of one or more components in a process-module water-cooling circuit. An open device allows cooling water to flow to the one or more components, while a close device prevents cooling water from flowing to the one or more components. At least one water-leak sensor is coupled to the close device to detect a water leak within the process tool. A check valve having an inlet port is coupled to an outlet of the one or more components, and an outlet port is coupled to a water-return reservoir. The check valve prevents water from back-flowing from the water-return reservoir into the one or more components. Other apparatuses and methods are disclosed.

公开(公告)号：US11967486B2

公开(公告)日：2024-04-23

申请号：US17424381

申请日：2020-01-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Andrew Stratton Bravo ,  Chih-Hsun Hsu ,  Serge Kosche ,  Stephen Whitten ,  Shih-Chung Kon ,  Mark Kawaguchi ,  Himanshu Chokshi ,  Dan Zhang ,  Gnanamani Amburose

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32467 ,  H01J37/32174

Abstract: A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.

公开(公告)号：US11961714B2

公开(公告)日：2024-04-16

申请号：US17334855

申请日：2021-05-31

Applicant: LINCO TECHNOLOGY CO., LTD.

Inventor： Yi-Yuan Huang ,  Yi-Cheng Liu

IPC: H01J37/32 ,  H01J1/00 ,  H01J3/00 ,  H01J5/00

CPC classification number: H01J37/32357 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32743 ,  H01J37/32834 ,  H01J2237/3341

Abstract: A substrate processing apparatus comprises a chamber member that defines an interior volume that has an aspect ratio. The chamber member comprises a pair of laterally opposing inlet walls and a loading port. Each of the pair of laterally opposing inlet walls has an inlet port configured to receive output from a remote plasma source. The loading port is arranged between the pair of inlet walls, configured to allow passage of a substrate into the interior volume.