Method and apparatus for evaluating insulating film
    1.
    发明授权
    Method and apparatus for evaluating insulating film 失效
    绝缘膜评估方法及装置

    公开(公告)号:US06720790B2

    公开(公告)日:2004-04-13

    申请号:US10385848

    申请日:2003-03-12

    IPC分类号: G01R3126

    摘要: There is provided a method for evaluating an insulating film entirely provided on a conductor layer for the characteristics or dimensions thereof. A measuring member having conductor bumps arranged thereon to be connected to wires is disposed above the insulating film on the conductor layer. Then, the conductor bumps are pressed against the insulating film with a given pressing force. By applying a voltage (electric stress) between the conductor bumps and the conductor layer, the characteristics including I-V characteristic, gate leakage current, and TDDB or the dimensions including thickness are evaluated.

    摘要翻译: 提供了一种用于评价其特性或尺寸完全设置在导体层上的绝缘膜的方法。 在导体层上的绝缘膜的上方配置具有与导线连接的导体凸块的测定部件。 然后,以给定的按压力将导体凸块按压在绝缘膜上。 通过在导体凸块和导体层之间施加电压(电应力),评价包括I-V特性,栅极泄漏电流和TDDB的特性或包括厚度的尺寸。

    Method and apparatus for evaluating insulating film

    公开(公告)号:US06583640B2

    公开(公告)日:2003-06-24

    申请号:US09808100

    申请日:2001-03-15

    IPC分类号: G01R3126

    摘要: There is provided a method for evaluating an insulating film entirely provided on a conductor layer for the characteristics or dimensions thereof. A measuring member having conductor bumps arranged thereon to be connected to wires is disposed above the insulating film on the conductor layer. Then, the conductor bumps are pressed against the insulating film with a given pressing force. By applying a voltage (electric stress) between the conductor bumps and the conductor layer, the characteristics including I-V characteristic, gate leakage current, and TDDB or the dimensions including thickness are evaluated.