公开(公告)号：US20110233382A1

公开(公告)日：2011-09-29

申请号：US12986621

申请日：2011-01-07

申请人： Stuart A. Solin ,  Samuel A. Wickline ,  AKM Shah Newaz ,  Kirk D. Wallace

发明人： Stuart A. Solin ,  Samuel A. Wickline ,  AKM Shah Newaz ,  Kirk D. Wallace

IPC分类号： H01L27/146 ,  H01L31/0224 ,  H01L29/02 ,  H01J40/14

CPC分类号： H01L27/14665 ,  B82Y15/00 ,  H01L27/1446 ,  H01L31/0304 ,  H01L31/09 ,  H01L31/108 ,  Y02E10/544

摘要： The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×1011 cm√Hz/W for 632 nm illumination and a high dynamic response of 40 dB making such sensors technologically competitive for a wide range of practical applications.

摘要翻译： 本发明人公开了一种新的高性能光学传感器，优选纳米级尺寸，其在室温下基于金属 - 半导体混合物（MSH）中的非常光导（EOC）现象，优选反EOC（I-EOC）现象起作用 ）结构具有半导体/金属界面。 这样的设计显示出没有露出半导体的高效光子传感器。 在使用示例性实施例的实验中，使用氦 - 氖激光辐射的超高空间分辨率4点光电导测量显示了对于250nm器件的显着大的光导特性，观察到的最大测量值为9460％EOC。 这种示例性的EOC装置还显示出对于632nm照明高于5.06×1011cm / Hz / W的特定检测率和40dB的高动态响应，使得这种传感器在广泛的实际应用中技术上是有竞争力的。

公开(公告)号：US08497459B2

公开(公告)日：2013-07-30

申请号：US12986621

申请日：2011-01-07

申请人： Stuart A. Solin ,  Samuel A. Wickline ,  Akm Shah Newaz ,  Kirk D. Wallace

发明人： Stuart A. Solin ,  Samuel A. Wickline ,  Akm Shah Newaz ,  Kirk D. Wallace

IPC分类号： H01J29/02 ,  H01J40/14

CPC分类号： H01L27/14665 ,  B82Y15/00 ,  H01L27/1446 ,  H01L31/0304 ,  H01L31/09 ,  H01L31/108 ,  Y02E10/544

摘要： The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×1011 cm√Hz/W for 632 nm illumination and a high dynamic response of 40 dB making such sensors technologically competitive for a wide range of practical applications.