Maintaining Updates of Multi-Level Non-Volatile Memory in Binary Non-Volatile Memory
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    发明申请
    Maintaining Updates of Multi-Level Non-Volatile Memory in Binary Non-Volatile Memory 审中-公开
    维持二进制非易失性存储器中多级非易失性存储器的更新

    公开(公告)号:US20110153912A1

    公开(公告)日:2011-06-23

    申请号:US12642584

    申请日:2009-12-18

    IPC分类号: G06F12/00 G06F12/02 G06F12/10

    摘要: A method of operating a memory system is presented. The memory system includes a controller and a non-volatile memory circuit, where the non-volatile memory circuit has a first portion, where data is stored in a binary format, and a second portion, where data is stored in a multi-state format. The controller manages the transfer of data to and from the memory system and the storage of data on the non-volatile memory circuit. The method includes receiving a first set of data and storing this first set of data in a first location in the second portion of the non-volatile memory circuit. The memory system subsequently receives updated data for a first subset of the first data set. The updated data is stored in a second location in the first portion of the non-volatile memory circuit, where the controller maintains a logical correspondence between the second location and the first subset of the first set of data.

    摘要翻译: 提出了一种操作存储系统的方法。 存储器系统包括控制器和非易失性存储器电路,其中非易失性存储器电路具有以二进制格式存储数据的第一部分和第二部分,其中数据以多状态格式存储 。 控制器管理到存储器系统和从存储器系统传送数据以及将数据存储在非易失性存储器电路上。 该方法包括接收第一组数据并将该第一组数据存储在非易失性存储器电路的第二部分中的第一位置。 存储器系统随后接收第一数据集的第一子集的更新数据。 更新的数据被存储在非易失性存储器电路的第一部分中的第二位置,其中控制器维持第一组数据的第二位置和第一子集之间的逻辑对应关系。