Apparatus and method for producing high purity diamond films at low
temperatures
    1.
    发明授权
    Apparatus and method for producing high purity diamond films at low temperatures 失效
    在低温下生产高纯度金刚石薄膜的装置和方法

    公开(公告)号:US4981568A

    公开(公告)日:1991-01-01

    申请号:US503107

    申请日:1990-04-02

    CPC classification number: C23C14/30 C23C14/0611 C23C14/221 C30B23/02 C30B29/04

    Abstract: Apparatus and method for producing diamond films. A source of free electrons is used to bombard a carbon block. Incident electrons vaporize the carbon surface, and free carbon atoms are ionized from collisions of the electrons with the carbon atoms. A collimating plate located above the carbon block includes an aperture for permitting the vaporized carbon ions to be collimated. On the other side of the collimating plate are first and second deflector plates, symmetrical with respect to the axis of the collimating plate aperture. A voltage potential therebetween produces an electrostatic field perpendicular to the axis of the aperture. Substrates located in the electrostatic field receive a carbon ion film which is essentially a diamond film structure.

    Abstract translation: 用于生产金刚石薄膜的装置和方法。 用自由电子来轰击一个碳块。 事件电子使碳表面蒸发,游离碳原子与电子与碳原子的碰撞电离。 位于碳块上方的准直板包括允许蒸发的碳离子被准直的孔。 在准直板的另一侧是相对于准直板孔的轴对称的第一和第二偏转板。 其间的电压电位产生垂直于孔径的静电场。 位于静电场中的基板接收基本上为金刚石膜结构的碳离子膜。

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