公开(公告)号：US20060051680A1

公开(公告)日：2006-03-09

申请号：US10933948

申请日：2004-09-03

Applicant: Alexander Tritchkov ,  Seongtae Jeong

Inventor： Alexander Tritchkov ,  Seongtae Jeong

IPC: G06F17/50 ,  G03F1/00

CPC classification number: G03F1/36 ,  G03F1/30

Abstract: This application includes techniques for applying image imbalance compensation by aperture sizing and optical proximity approximation in designing a phase mask.

Abstract translation: 该应用包括在设计相位掩模时通过孔径尺寸和光学邻近近似应用图像不平衡补偿的技术。

公开(公告)号：US08713483B2

公开(公告)日：2014-04-29

申请号：US11758510

申请日：2007-06-05

Applicant: Alexander Tritchkov ,  Emile Y. Sahouria ,  Le Hong

Inventor： Alexander Tritchkov ,  Emile Y. Sahouria ,  Le Hong

IPC: G06F17/50

CPC classification number: G03F1/70 ,  G03F1/26

Abstract: A method for separating features in a target layout into different mask layouts for use in a photolithographic process. Features of a target layer are searched for features having a predefined shape. In one embodiment, portions of the feature having the predefined shape divided into two or more sub-features and at least one sub-feature are not considered when separating the features into two or more mask layouts. In another embodiment, features having a predefined shape are cut to form two or more sub-features and all features and sub-features are considered when separating the features of the target layout into the two or more mask layouts.

Abstract translation: 用于将目标布局中的特征分离成用于光刻工艺的不同掩模布局的方法。 搜索具有预定义形状的特征的目标层的特征。 在一个实施例中，当将特征分成两个或更多个掩模布局时，不考虑具有划分为两个或更多个子特征和至少一个子特征的预定形状的特征的部分。 在另一个实施例中，切割具有预定形状的特征以形成两个或更多个子特征，并且当将目标布局的特征分成两个或更多个掩模布局时，考虑所有特征和子特征。

公开(公告)号：US20080307381A1

公开(公告)日：2008-12-11

申请号：US11758510

申请日：2007-06-05

Applicant: Alexander Tritchkov ,  Emile Y. Sahouria ,  Le Hong

Inventor： Alexander Tritchkov ,  Emile Y. Sahouria ,  Le Hong

IPC: G06F9/455

CPC classification number: G03F1/70 ,  G03F1/26

Abstract: A method for separating features in a target layout into different mask layouts for use in a photolithographic process. Features of a target layer are searched for features having a predefined shape. In one embodiment, portions of the feature having the predefined shape divided into two or more sub-features and at least one sub-feature are not considered when separating the features into two or more mask layouts. In another embodiment, features having a predefined shape are cut to form two or more sub-features and all features and sub-features are considered when separating the features of the target layout into the two or more mask layouts.

Abstract translation: 用于将目标布局中的特征分离成用于光刻工艺的不同掩模布局的方法。 搜索具有预定义形状的特征的目标层的特征。 在一个实施例中，当将特征分成两个或更多个掩模布局时，不考虑具有划分为两个或更多个子特征和至少一个子特征的预定形状的特征的部分。 在另一个实施例中，切割具有预定形状的特征以形成两个或更多个子特征，并且当将目标布局的特征分成两个或更多个掩模布局时，考虑所有特征和子特征。

公开(公告)号：US20090098469A1

公开(公告)日：2009-04-16

申请号：US11974249

申请日：2007-10-12

Applicant: Kishore K. Chakravorty ,  Sven Henrichs ,  Yi-Ping Liu ,  Henry Yun ,  Brian Irving ,  Alexander Tritchkov ,  Karmen Yung

Inventor： Kishore K. Chakravorty ,  Sven Henrichs ,  Yi-Ping Liu ,  Henry Yun ,  Brian Irving ,  Alexander Tritchkov ,  Karmen Yung

IPC: G03F1/00 ,  B44C1/22

CPC classification number: G03F1/30

Abstract: Design rules are described for a phase alternating shift mask for minimum chrome width and maximum segment length, where an embodiment employs during a cleaning process of the mask a megasonic power of 50 Watts at 1 MHz, and 30 Watts at 3 MHz. Some embodiments utilize an dry etch Carbon Tetrafluoride and Dioxygen based process. Other embodiments are described and claimed.

Abstract translation: 描述了用于最小镀铬宽度和最大段长度的相位交替移位掩模的设计规则，其中实施例在掩模的清洁处理期间采用1MHz的50瓦特和3MHz的30瓦特的兆声波功率。 一些实施方案利用干蚀刻碳四氟化物和基于氧的方法。 描述和要求保护其他实施例。