公开(公告)号：US20060251317A1

公开(公告)日：2006-11-09

申请号：US11400530

申请日：2006-04-10

申请人： Yair Eran ,  Gad Greenberg ,  Ami Sade ,  Shirley Hemar

发明人： Yair Eran ,  Gad Greenberg ,  Ami Sade ,  Shirley Hemar

IPC分类号： G06K9/00

CPC分类号： G03F1/84 ,  G03F7/70625 ,  G06T7/0006 ,  G06T2207/30148

摘要： A method and apparatus for inspecting a reticle measures line widths using an inspection tool that images the reticle and compares the image with a design database to detect errors in real time. The differences between the line widths of patterns on the reticle and the design database are stored during the inspection procedure. The difference (or “bias”) information is then processed off-line to create a map of all the local line-width deviation values (i.e., bias) of every feature on the reticle. The resultant local bias map can be used as a feedback mechanism to improve the reticle manufacturing process, as a “go/no go” criteria for the validity of the reticle, and as a standard report shipped together with the mask to the wafer fabrication facility, where it can be used as a yield-enhancing tool.

公开(公告)号：US07486814B2

公开(公告)日：2009-02-03

申请号：US11400530

申请日：2006-04-10

申请人： Yair Eran ,  Gad Greenberg ,  Ami Sade ,  Shirley Hemar

发明人： Yair Eran ,  Gad Greenberg ,  Ami Sade ,  Shirley Hemar

IPC分类号： G06K9/00

CPC分类号： G03F1/84 ,  G03F7/70625 ,  G06T7/0006 ,  G06T2207/30148

摘要： A method and apparatus for inspecting a reticle measures line widths using an inspection tool that images the reticle and compares the image with a design database to detect errors in real time. The differences between the line widths of patterns on the reticle and the design database are stored during the inspection procedure. The difference (or “bias”) information is then processed off-line to create a map of all the local line-width deviation values (i.e., bias) of every feature on the reticle. The resultant local bias map can be used as a feedback mechanism to improve the reticle manufacturing process, as a “go/no go” criteria for the validity of the reticle, and as a standard report shipped together with the mask to the wafer fabrication facility, where it can be used as a yield-enhancing tool.

摘要翻译： 用于检查掩模版的方法和装置使用对掩模版进行成像的检查工具测量线宽，并将图像与设计数据库进行比较以实时检测错误。 在检查过程中存储了掩模版和设计数据库上的图案的线宽之间的差异。 然后离线处理差异（或“偏置”）信息以创建掩模版上每个特征的所有局部线宽偏差值（即，偏置）的图。 所得到的局部偏置图可以用作反馈机制来改进光罩制造过程，作为标线的有效性的“去/不去”标准，以及作为与掩模一起发送到晶片制造设备的标准报告 ，其中它可以用作产量增强工具。

公开(公告)号：US07133549B2

公开(公告)日：2006-11-07

申请号：US10322708

申请日：2002-12-19

申请人： Yair Eran ,  Gad Greenberg ,  Ami Sade ,  Shirley Hemar

发明人： Yair Eran ,  Gad Greenberg ,  Ami Sade ,  Shirley Hemar

IPC分类号： G06K9/00 ,  G06K9/48

CPC分类号： G03F1/84 ,  G03F7/70625 ,  G06T7/0006 ,  G06T2207/30148

摘要： A method and apparatus for inspecting a reticle measures line widths using an inspection tool that images the reticle and compares the image with a design database to detect errors in real time. The differences between the line widths of patterns on the reticle and the design database are stored during the inspection procedure. The difference (or “bias”) information is then processed off-line to create a map of all the local line-width deviation values (i.e., bias) of every feature on the reticle. The resultant local bias map can be used as a feedback mechanism to improve the reticle manufacturing process, as a “go/no go” criteria for the validity of the reticle, and as a standard report shipped together with the mask to the wafer fabrication facility, where it can be used as a yield-enhancing tool.