公开(公告)号：US4642135A

公开(公告)日：1987-02-10

申请号：US766635

申请日：1985-08-16

申请人： Theodor Benecke ,  Benno Lux ,  Wolf-Dieter Schubert ,  An Tuan Ta ,  Gerhard Kahr

发明人： Theodor Benecke ,  Benno Lux ,  Wolf-Dieter Schubert ,  An Tuan Ta ,  Gerhard Kahr

IPC分类号： C21C1/08 ,  C21C1/10 ,  C22C33/00 ,  C21C7/02

CPC分类号： C21C1/08 ,  C22C33/00

摘要： The invention relates to a process for treating cast iron melts with silicon carbide. In this process, the silicon carbide used is subjected, before being introduced into the cast iron melt, to an oxidizing treatment in such a manner that the individual SiC granules are coated with a covering containing silica. A silicon carbide of this quality can be manufactured, for example, by subjecting the SiC in granular form, in a static or agitated mass, to an oxidizing atmosphere, such as air, oxygen or water vapor, at temperatures within the range of 900.degree.-1600.degree. C. and subsequently subjecting the agglomerates formed to gentle comminution to expose the SiC surfaces which, as a result of the formation of an agglomerate, completely or partially escaped the oxidizing attack.

摘要翻译： 本发明涉及用碳化硅处理铸铁熔体的方法。 在这个过程中，所用的碳化硅在被引入铸铁熔体之前被以这样一种方式进行氧化处理，使得各个SiC颗粒被包含二氧化硅的覆盖物涂覆。 这种质量的碳化硅可以例如通过将颗粒状的SiC以静态或搅拌的质量的形式在900℃的温度范围内经受氧化气氛如空气，氧气或水蒸气来制造。 -1600℃，随后使形成的附聚物温和粉碎以暴露SiC表面，其由于形成聚集体而完全或部分地脱离氧化侵蚀。