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8 条记录 (耗时 0.012 秒)

    Process for treating cast iron melts with silicon carbide
    1.
    发明授权
    Process for treating cast iron melts with silicon carbide 失效
    用碳化硅处理铸铁熔体的方法

    公开(公告)号：US4642135A

    公开(公告)日：1987-02-10

    申请号：US766635

    申请日：1985-08-16

    申请人： Theodor Benecke ,  Benno Lux ,  Wolf-Dieter Schubert ,  An Tuan Ta ,  Gerhard Kahr

    发明人： Theodor Benecke ,  Benno Lux ,  Wolf-Dieter Schubert ,  An Tuan Ta ,  Gerhard Kahr

    IPC分类号： C21C1/08 ,  C21C1/10 ,  C22C33/00 ,  C21C7/02

    CPC分类号： C21C1/08 ,  C22C33/00

    摘要： The invention relates to a process for treating cast iron melts with silicon carbide. In this process, the silicon carbide used is subjected, before being introduced into the cast iron melt, to an oxidizing treatment in such a manner that the individual SiC granules are coated with a covering containing silica. A silicon carbide of this quality can be manufactured, for example, by subjecting the SiC in granular form, in a static or agitated mass, to an oxidizing atmosphere, such as air, oxygen or water vapor, at temperatures within the range of 900.degree.-1600.degree. C. and subsequently subjecting the agglomerates formed to gentle comminution to expose the SiC surfaces which, as a result of the formation of an agglomerate, completely or partially escaped the oxidizing attack.

    摘要翻译： 本发明涉及用碳化硅处理铸铁熔体的方法。 在这个过程中，所用的碳化硅在被引入铸铁熔体之前被以这样一种方式进行氧化处理，使得各个SiC颗粒被包含二氧化硅的覆盖物涂覆。 这种质量的碳化硅可以例如通过将颗粒状的SiC以静态或搅拌的质量的形式在900℃的温度范围内经受氧化气氛如空气，氧气或水蒸气来制造。 -1600℃，随后使形成的附聚物温和粉碎以暴露SiC表面，其由于形成聚集体而完全或部分地脱离氧化侵蚀。

    Method of depositing a polycrystalline diamond layer on a nitride substrate
    2.
    发明授权
    Method of depositing a polycrystalline diamond layer on a nitride substrate 失效
    在氮化物衬底上沉积多晶金刚石层的方法

    公开(公告)号：US5925413A

    公开(公告)日：1999-07-20

    申请号：US823598

    申请日：1997-03-25

    申请人： Hermann Holzer ,  Roland Haubner ,  Benno Lux ,  Helmut Nechansky

    发明人： Hermann Holzer ,  Roland Haubner ,  Benno Lux ,  Helmut Nechansky

    IPC分类号： C23C16/02 ,  C23C16/26 ,  C23C16/27 ,  B05D3/10

    CPC分类号： C23C16/27 ,  C23C16/0227

    摘要： A method of depositing a polycrystalline diamond layer on a nitride substrate is disclosed, which comprises chemically-etching the nitride substrate with a KOH or NaOH solution or melt and depositing the polycrystalline diamond layer on the nitride substrate from a vapor phase, wherein the etching temperature, time and concentration of the etchant are controlled so that at least 75% of the interface between the substrate and the diamond layer is covered by diamond crystals, each diamond crystal having a contact area with the substrate of .gtoreq.20 um.sup.2.

    摘要翻译： 公开了一种在氮化物衬底上沉积多晶金刚石层的方法，其中包括用KOH或NaOH溶液或熔融物对氮化物衬底进行化学蚀刻，并从气相沉积氮化物衬底上的多晶金刚石层，其中蚀刻温度 控制蚀刻剂的时间和浓度，使得衬底和金刚石层之间的界面的至少75％被金刚石晶体覆盖，每个金刚石晶体与衬底的接触面积为≥20μm2。

    Composite element, process for its preparation and its use
    3.
    发明授权
    Composite element, process for its preparation and its use 失效
    复合元件，其制备及其使用过程

    公开(公告)号：US5296207A

    公开(公告)日：1994-03-22

    申请号：US749304

    申请日：1991-08-23

    申请人： Benno Lux

    发明人： Benno Lux

    IPC分类号： C01B31/06 ,  C22C26/00 ,  C30B25/10 ,  C30B29/04 ,  B01J3/06

    CPC分类号： C30B25/105 ,  H01L2924/0002

    摘要： A composite element is disclosed, having improved heat conductivity, and is composed of a substrate whose surface layer enables homeo- or heteroepitactic growth of the diamond lattice from the gas phase, and of a low pressure diamond layer grown on the substrate, and in which the diamond layer grown is enriched compared to the normal diamond composition in the carbon isotope C.sup.12 and depleted in the heavier carbon isotopes C.sup.13 and C.sup.14.

    摘要翻译： 公开了具有改进的导热性的复合元件，并且由表面层使得来自气相的金刚石晶格的均匀或异质生长以及在基底上生长的低压金刚石层的基底组成，其中 与碳同位素C12中的正常金刚石组成相比，生长的金刚石层富集，并且耗尽了较重的碳同位素C13和C14。

    Casting process with instantaneous unidirectional solidification
    4.
    发明授权
    Casting process with instantaneous unidirectional solidification 失效
    瞬时单向凝固铸造工艺

    公开(公告)号：US4057097A

    公开(公告)日：1977-11-08

    申请号：US664093

    申请日：1976-03-05

    申请人： Benno Lux ,  Wilfried Kurz ,  Jean-Claude Hubert ,  Francois Mollard ,  Guido Walt

    发明人： Benno Lux ,  Wilfried Kurz ,  Jean-Claude Hubert ,  Francois Mollard ,  Guido Walt

    IPC分类号： B22D27/04 ,  C30B11/00 ,  B22D27/20

    CPC分类号： C30B11/003 ,  B22D27/045 ,  C30B11/00 ,  C30B29/605

    摘要： A metallic alloy is cast in a mold to produce a solid body by unidirectional solidification. The alloy, initially in a molten state, is cast into a mold and is completely and progressively cooled in the mold while a unidirectional thermal gradient superimposed thereon parallel to a direction determined by the configuration of the mold (predetermined direction) until a metastable equilibrium is reached in which the entire body of the melt is in a super-cooled state as a homogeneous liquid. The equilibrium is then broken to cause solidification of the alloy and the formation of dendritic crystals with their principal axes parallel to the thermal gradient substantially instantly and without noticeable advance of a solidification front across the melt.

    摘要翻译： 金属合金铸造在模具中，通过单向凝固生产固体。 初始处于熔融状态的合金被铸造成模具，并且在模具中完全和逐渐冷却，同时叠加在其上的单向热梯度平行于由模具构型确定的方向（预定方向）直到亚稳定平衡为止 熔体的整个体均匀地成为超冷却状态。 然后将平衡破裂，导致合金凝固和树枝状晶体的形成，其主轴基本上立即平行于热梯度，并且在凝固前沿穿过熔体没有明显的进展。