公开(公告)号：US6146982A

公开(公告)日：2000-11-14

申请号：US853158

申请日：1997-05-08

申请人： Wolfgang Werner ,  Klaus Wiesinger ,  Andreas Preussger

发明人： Wolfgang Werner ,  Klaus Wiesinger ,  Andreas Preussger

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/331

CPC分类号： H01L21/28512

摘要： A method for producing a low-impedance contact between a metallizing layer and a semiconductor material of a first conductivity type having a semiconductor surface, an insulation layer on the semiconductor surface and a semiconductor layer on the insulation layer, includes applying a first insulating layer with a predetermined content of dopants on the semiconductor layer, and structuring the first insulating layer by anisotropic etching, forming first and second openings. The semiconductor layer is anisotropically etched by using the first insulating layer as a mask. A first dopant of a second conductivity type is implanted and driven through the first opening into the semiconductor material with a first phototechnique, forming a first zone in the semiconductor material. A second dopant of the first conductivity type is implanted through the second opening into the semiconductor material with a second phototechnique. A second doped insulating layer is applied over the entire surface. The second insulating layer is anisotropically back-etched down to the semiconductor surface, with peripheral insulating webs remaining in the first opening. The semiconductor material is self-adjustingly anisotropically etched down to the first zone, by using the second insulating layer as a mask. A third dopant of higher doping and of the second conductivity type is implanted into the first zone by using the second insulating layer as a mask. A metallizing layer is applied.

摘要翻译： 一种用于在金属化层和具有半导体表面的半导体材料的半导体材料，半导体表面上的绝缘层和绝缘层上的半导体层之间产生低阻抗接触的方法，包括：将第一绝缘层与 半导体层上的预定含量的掺杂剂，并且通过各向异性蚀刻构造第一绝缘层，形成第一和第二开口。 通过使用第一绝缘层作为掩模对半导体层进行各向异性蚀刻。 第一导电类型的第一掺杂剂通过第一光刻技术被注入和驱动通过第一开口进入半导体材料，在半导体材料中形成第一区。 第一导电类型的第二掺杂剂通过第二开口以第二光电技术注入半导体材料。 在整个表面上施加第二掺杂绝缘层。 将第二绝缘层各向异性地向下蚀刻到半导体表面，其中外围绝缘网保留在第一开口中。 通过使用第二绝缘层作为掩模，将半导体材料自适应地各向异性地蚀刻到第一区域。 通过使用第二绝缘层作为掩模，将较高掺杂和第二导电类型的第三掺杂剂注入第一区。 施加金属化层。