公开(公告)号：US06380550B1

公开(公告)日：2002-04-30

申请号：US08913414

申请日：1997-09-17

Applicant: Leigh Trevor Canham ,  Timothy Ingram Cox ,  Armando Loni ,  Andrew John Simons ,  Richard Simon Blacker

Inventor： Leigh Trevor Canham ,  Timothy Ingram Cox ,  Armando Loni ,  Andrew John Simons ,  Richard Simon Blacker

IPC: H01L3300

CPC classification number: H01L33/346

Abstract: An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminum. The device includes a heavily doped region (28) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device (10) has a rectifying p-n junction within the porous silicon region (22).

Abstract translation: 电致发光器件（10）包括与体硅区域（20）相邻的多孔硅区域（22），以及透明氧化铟锡的顶部电接触件（24）和铝的底部电接触件（26）。 器件包括重掺杂区域（28）以提供欧姆接触。 多孔硅区域（22）通过通过体硅的离子注入表面层进行阳极氧化来制造。 硅离子注入和阳极氧化阶段之间保持未退火。 器件（10）在多孔硅区域（22）内具有整流p-n结。