公开(公告)号：US20070151595A1

公开(公告)日：2007-07-05

申请号：US11476091

申请日：2006-06-28

申请人： Chih-Hung Chiou ,  Pei-Hsuan Wu ,  Shang-Fu Chen ,  I-Liang Chen ,  Jung-Tsung Hsu ,  Andrew-Yen Tzeng ,  Chih-Hung Wu

发明人： Chih-Hung Chiou ,  Pei-Hsuan Wu ,  Shang-Fu Chen ,  I-Liang Chen ,  Jung-Tsung Hsu ,  Andrew-Yen Tzeng ,  Chih-Hung Wu

IPC分类号： H01L31/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/0725 ,  Y02E10/544

摘要： A solar cell with a superlattice structure and a fabricating method thereof are provided, which includes fabricating a superlattice structure of GaAsN/GaInAs, GaAsN/GaSbAs, or GaAsN/GaInSbAs between a base and an emitter of a middle cell of a triple junction solar cell by a strain-compensation technology. The provided solar cell not only decreases crystalline defects and increases the critical thickness of the crystal, but also makes the energy bandgap of GaAsN and GaInAs reach around the energy of 1.0 eV (electron volt). Hence, the absorption region can be raised to around the energy of 1.0 eV to enhance the efficiency of the solar cell.

摘要翻译： 提供了具有超晶格结构的太阳能电池及其制造方法，其包括在三结太阳能电池的中间电池的基极和发射极之间制造GaAsN / GaInAs，GaAsN / GaAsbAs或GaAsN / GaInBaAs的超晶格结构 通过应变补偿技术。 所提供的太阳能电池不仅减少晶体缺陷并增加晶体的临界厚度，而且使GaAsN和GaInAs的能带隙达到1.0eV（电子伏特）的能量附近。 因此，可以将吸收区域升高到1.0eV的能量附近，以提高太阳能电池的效率。