公开(公告)号：US12002897B2

公开(公告)日：2024-06-04

申请号：US18331173

申请日：2023-06-08

Applicant: Asahi Kasei Microdevices Corporation

Inventor： Osamu Morohara ,  Yoshiki Sakurai ,  Hiromi Fujita ,  Hirotaka Geka

IPC: H01L31/109 ,  G01J5/08 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/109 ,  G01J5/0853 ,  H01L31/035236 ,  H01L31/1844

Abstract: An infrared detecting device is provided. The infrared detecting device includes: a semiconductor substrate; a first layer having a first conductivity type on the semiconductor substrate; a light receiving layer on the first layer; and a second layer having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure. The second layer contains AlzIn1-zSb (0.05

公开(公告)号：US20240162356A1

公开(公告)日：2024-05-16

申请号：US18192430

申请日：2023-03-29

Applicant: LandMark Optoelectronics Corporation

Inventor： Hung-Wen HUANG ,  Yung-Chao CHEN ,  Yi-Hsiang WANG ,  Wei LIN

IPC: H01L31/0392 ,  H01L31/0304 ,  H01L31/0352

CPC classification number: H01L31/0392 ,  H01L31/03046 ,  H01L31/035236

Abstract: A light detecting device includes a substrate that has a lattice constant. A buffer layer is disposed on the substrate. A gradient layer is formed on the buffer layer opposite to the substrate, and includes a plurality of sublayers that have respectively lattice constants each of which is greater than the lattice constant of the substrate. The sublayers are arranged in a manner that the lattice constants of the sublayers undergo a gradual increase in lattice constant in a direction away from the substrate. A barrier layer is formed on the gradient layer opposite to the buffer layer, and has a lattice constant which is greater than that of the substrate and no smaller than the lattice constants of the sublayers. An absorption layer is formed on the barrier layer opposite to the gradient layer.

公开(公告)号：US20240162208A1

公开(公告)日：2024-05-16

申请号：US18077192

申请日：2022-12-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Chih-Wei Chang ,  Fu-Yu Tsai ,  Bin-Siang Tsai ,  Chung-Yi Chiu

IPC: H01L25/16 ,  H01L29/20 ,  H01L29/40 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66 ,  H01L29/778 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/18 ,  H03H3/08 ,  H03H9/02

CPC classification number: H01L25/167 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/454 ,  H01L29/475 ,  H01L29/66462 ,  H01L29/7786 ,  H01L31/022408 ,  H01L31/03044 ,  H01L31/035236 ,  H01L31/1856 ,  H03H3/08 ,  H03H9/02976

Abstract: A structure with a photodiode, an HEMT and an SAW device includes a photodiode and an HEMT. The photodiode includes a first electrode and a second electrode. The first electrode contacts a P-type III-V semiconductor layer. The second electrode contacts an N-type III-V semiconductor layer. The HEMT includes a P-type gate disposed on an active layer. A gate electrode is disposed on the P-type gate. Two source/drain electrodes are respectively disposed at two sides of the P-type gate. Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate. Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, and between one of the two source/drain electrodes and the active layer and between the other one of two source/drain electrodes and the active layer.

公开(公告)号：US11978814B2

公开(公告)日：2024-05-07

申请号：US17474492

申请日：2021-09-14

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： He Lin ,  Sameer Pendharkar

IPC: H01L31/0352 ,  H01L25/04 ,  H01L27/144 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L31/035236 ,  H01L25/042 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/03048 ,  H01L31/1035 ,  H01L31/1848 ,  H01L31/1852

Abstract: A photo detector includes a superlattice with an undoped first semiconductor layer including undoped intrinsic semiconductor material, a doped second semiconductor layer having a first conductivity type on the first semiconductor layer, an undoped third semiconductor layer including undoped intrinsic semiconductor material on the second semiconductor layer, and a fourth semiconductor layer having a second opposite conductivity type on the third semiconductor layer, along with a first contact having the first conductivity type in the first, second, third, and fourth semiconductor layers, and a second contact having the second conductivity type and spaced apart from the first contact in the first, second, third, and fourth semiconductor layers. An optical shield on a second shielded portion of a top surface of the fourth semiconductor layer establishes electron and hole lakes. A packaging structure includes an opening that allows light to enter an exposed first portion of the top surface of the fourth semiconductor layer.

公开(公告)号：US11978813B1

公开(公告)日：2024-05-07

申请号：US16725269

申请日：2019-12-23

Applicant: Government of the United States of America as represented by the Secretary of the Air Force

Inventor： Geoffrey Keith Bradshaw

IPC: H01L31/0352 ,  H01L31/0304 ,  H01L31/05

CPC classification number: H01L31/035236 ,  H01L31/03046 ,  H01L31/0512

Abstract: Systems, methods and apparatus related to a multijunction solar cell. The apparatus comprises a first sub-solar cell, a second sub-solar cell in series with the first sub-solar cell and one or more quantum wells. At least some of the quantum wells are disposed in a region of the first sub-solar cell, and have a thickness and a bandgap sized such that a bandgap in selected quantum wells are less than a bandgap of a material of the first sub-solar cell and greater than a bandgap of a material of the second sub-solar cell resulting in radiative coupling between the first sub-solar cell and the second sub-solar cell.

公开(公告)号：US20240120425A1

公开(公告)日：2024-04-11

申请号：US18479867

申请日：2023-10-03

Applicant: Canon Kabushiki Kaisha

Inventor： TAKESHI YOSHIOKA

IPC: H01L31/0352 ,  G01J5/20 ,  H01L23/48 ,  H01L33/38

CPC classification number: H01L31/035281 ,  G01J5/20 ,  H01L23/481 ,  H01L33/38 ,  H01L31/035236 ,  H01L33/06

Abstract: A semiconductor element for generating or detecting a terahertz wave is provided. The element includes a substrate, a first electrode, a semiconductor layer disposed between the substrate and the first electrode and including a gain medium for the terahertz wave, a dielectric layer disposed to cover the substrate, and a second electrode disposed on the dielectric layer and connected to the first electrode via an opening provided in the dielectric layer. A portion of the second electrode disposed in the opening includes a first inclined portion, a second inclined portion disposed between the first inclined portion and the first electrode and is less inclined than the first inclined portion, and an intermediate portion connecting the first and second inclined portions. The intermediate portion includes a planar terrace and the terrace is less inclined than the first and second inclined portions.

公开(公告)号：US20240113241A1

公开(公告)日：2024-04-04

申请号：US18265654

申请日：2021-11-26

Applicant: LYNRED ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Axel EVIRGEN ,  Jean-Luc REVERCHON

IPC: H01L31/0352 ,  H01L27/146 ,  H01L31/0304 ,  H01L31/09

CPC classification number: H01L31/035236 ,  H01L27/14649 ,  H01L31/03046 ,  H01L31/09

Abstract: A device for detecting infrared radiation includes at least one pixel comprising: a first superlattice composed of the repetition of an elementary group comprising: a first layer having a first bandgap and a first conduction-band minimum; at least a second layer having a second bandgap and a second conduction-band minimum strictly lower than the first conduction-band minimum; a third layer having a third bandgap narrower than the first and second bandgaps and a third conduction-band minimum strictly lower than the second conduction-band minimum. The elementary group is produced in a first stacking configuration in the following order: the second layer, the third layer, the second layer, then the first layer; or in a second stacking configuration such that the third layer is confined between the first and second layers.

公开(公告)号：US11909171B2

公开(公告)日：2024-02-20

申请号：US17219744

申请日：2021-03-31

Applicant: Apple Inc.

Inventor： Tong Chen ,  Fei Tan ,  Mingzhou Jin

IPC: G01C3/08 ,  H01S5/026 ,  H01L31/0352 ,  H01S5/183 ,  H01S5/34 ,  G01S7/481 ,  G01S7/4912 ,  G01S7/4913

CPC classification number: H01S5/026 ,  G01S7/4812 ,  G01S7/4913 ,  G01S7/4916 ,  G01S7/4917 ,  H01L31/035236 ,  H01S5/18361 ,  H01S5/34

Abstract: An optical sensor system includes a set of epitaxial layers formed on a semiconductor substrate. The set of epitaxial layers defines a semiconductor laser having a first multiple quantum well (MQW) structure. Electromagnetic radiation is generated by the first MQW structure, emitted from the first MQW structure, and self-mixed with a portion of the emitted electromagnetic radiation that is returned to the first MQW structure. The set of epitaxial layers also defines a second MQW structure operable to generate a first photocurrent responsive to detecting a first emission of the semiconductor laser, and a third MQW structure operable to generate a second photocurrent responsive to detecting a second emission of the semiconductor laser. The optical sensor system also includes a circuit configured to generate a self-mixing interferometry (SMI) signal by combining the first photocurrent and the second photocurrent.

公开(公告)号：US20230420586A1

公开(公告)日：2023-12-28

申请号：US18342617

申请日：2023-06-27

Applicant: SLT Technologies, Inc.

Inventor： Islam SAYED ,  Sang Ho OH ,  Nathan YOUNG ,  Drew W. CARDWELL ,  Mark P. D'EVELYN

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0236 ,  H01L31/109 ,  H01L31/18

CPC classification number: H01L31/035236 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/03048 ,  H01L31/02363 ,  H01L31/109 ,  H01L31/1848

Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

公开(公告)号：US11804561B2

公开(公告)日：2023-10-31

申请号：US17440939

申请日：2020-02-21

Applicant: Sony SemiConductor Solutions Corporation

Inventor： Shuji Manda

IPC: H01L31/0352 ,  H01L27/146 ,  H01L31/107 ,  H01L31/18

CPC classification number: H01L31/035236 ,  H01L27/14601 ,  H01L31/03529 ,  H01L31/1075 ,  H01L31/186

Abstract: A light receiving element (1) according to an embodiment of the present disclosure includes: a semiconductor layer including a compound semiconductor material; a first impurity diffusion region (12A) provided on one surface of the semiconductor layer; and a second impurity diffusion region (12B) provided around the first impurity diffusion region (12A). The second impurity diffusion region (12B) has a lower impurity concentration than an impurity concentration of the first impurity diffusion region (12A).