公开(公告)号：US06333524B1

公开(公告)日：2001-12-25

申请号：US09342018

申请日：1999-06-28

申请人： Chuen-Der Lien ,  Anita M. Hansen ,  David J. Pilling

发明人： Chuen-Der Lien ,  Anita M. Hansen ,  David J. Pilling

IPC分类号： H01L2710

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： In a multi-level interconnect structure, a fusible material fills an opening in an isolation layer disposed between two interconnect levels or between an interconnect level and a device layer. The opening which may be, for example, a contact hole or a via, may be fabricated using processes generally used to fabricate normally sized vias and contact holes. The opening has a cross-sectional area A reduced by a factor of x relative to normally sized openings. Because the fusible interlevel interconnection has a reduced cross-sectional area, a programming current develops a destructive programming current density within fusible interlevel interconnection while current densities in coupled conductors, including normally sized vias and contacts, remain within long term reliability limits. Read/write circuitry connected to the fusible interlevel interconnection supports the programming current and supports a read current. The read current is regulated such that a responsive current density in a nonprogrammned fusible interlevel interconnection does not exceed long term reliability limits.

摘要翻译： 在多层互连结构中，可熔材料填充设置在两个互连层之间或互连层与器件层之间的隔离层中的开口。 可以使用通常用于制造通常尺寸的通孔和接触孔的工艺来制造可以是例如接触孔或通孔的开口。 开口具有相对于正常尺寸的开口减小X因子的横截面面积A. 由于易熔层间互连具有减小的横截面积，因此编程电流在易熔层间互连中产生破坏性编程电流密度，而耦合导体（包括通常尺寸的通孔和触点）中的电流密度仍然保持在长期可靠性限度内。 连接到易熔层互连的读/写电路支持编程电流并支持读取电流。 读取电流被调节，使得非编程的可熔层间互连中的响应电流密度不超过长期可靠性限制。

公开(公告)号：US5949127A

公开(公告)日：1999-09-07

申请号：US870333

申请日：1997-06-06

申请人： Chuen-Der Lien ,  Anita M. Hansen ,  David J. Pilling

发明人： Chuen-Der Lien ,  Anita M. Hansen ,  David J. Pilling

IPC分类号： H01L23/525 ,  H01L29/94

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/3011

摘要： In a multi-level interconnect structure, a fusible material fills an opening in an isolation layer disposed between two interconnect levels or between an interconnect level and a device layer. The opening which may be, for example, a contact hole or a via, may be fabricated using processes generally used to fabricate normally sized vias and contact holes. The opening has a cross-sectional area A reduced by a factor of x relative to normally sized openings. Because the fusible interlevel interconnection has a reduced cross-sectional area, a programming current develops a destructive programming current density within fusible interlevel interconnection while current densities in coupled conductors, including normally sized vias and contacts, remain within long term reliability limits. Read/write circuitry connected to the fusible interlevel interconnection supports the programming current and supports a read current. The read current is regulated such that a responsive current density in a nonprogrammed fusible interlevel interconnection does not exceed long term reliability limits.

摘要翻译： 在多层互连结构中，可熔材料填充设置在两个互连层之间或互连层与器件层之间的隔离层中的开口。 可以使用通常用于制造通常尺寸的通孔和接触孔的工艺来制造可以是例如接触孔或通孔的开口。 开口具有相对于正常尺寸的开口减小X因子的横截面面积A. 由于易熔层间互连具有减小的横截面积，因此编程电流在易熔层间互连中产生破坏性编程电流密度，而耦合导体（包括通常尺寸的通孔和触点）中的电流密度仍然保持在长期可靠性限度内。 连接到易熔层互连的读/写电路支持编程电流并支持读取电流。 读取电流被调节，使得非编程的可熔层间互连中的响应电流密度不超过长期可靠性限制。