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1.
公开(公告)号:US07662669B2
公开(公告)日:2010-02-16
申请号:US11782488
申请日:2007-07-24
IPC分类号: H01L21/00
CPC分类号: B81B7/007 , B81B2201/0271 , B81C2203/0118 , H01L23/10 , H01L2924/0002 , H01L2924/01079 , H01L2924/1423 , H01L2924/3011 , H01L2924/00
摘要: A method for fabricating wafer-level packages including lateral interconnects. The method includes precutting a cover wafer at the locations where the cover wafer will be completely cut through to separate the wafer-level packages. The cover wafer is bonded to the substrate wafer using bonding rings so as to seal the integrated circuit within a cavity between the cover wafer and the substrate wafer, where the precuts face the substrate wafer. The cover wafer is then cut at the precut locations to remove the unwanted portions of the cover wafer between the packages and expose contacts or probe pads for the lateral interconnects. The substrate wafer is then cut between the wafer-level packages to separate the packages.
摘要翻译: 一种用于制造包括横向互连的晶片级封装件的方法。 该方法包括在覆盖晶片将被完全切割穿过的位置处去除覆盖晶片以分离晶片级封装。 覆盖晶片使用接合环结合到基板晶片,以便将集成电路密封在盖晶片和基板晶片之间的空腔内,其中预切线面对基板晶片。 然后在预切割位置切割覆盖晶片以去除封装之间的覆盖晶片的不需要的部分,并暴露横向互连的触点或探针焊盘。 然后在晶片级封装之间切割衬底晶片以分离封装。
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2.
公开(公告)号:US20090029526A1
公开(公告)日:2009-01-29
申请号:US11782488
申请日:2007-07-24
IPC分类号: H01L21/00
CPC分类号: B81B7/007 , B81B2201/0271 , B81C2203/0118 , H01L23/10 , H01L2924/0002 , H01L2924/01079 , H01L2924/1423 , H01L2924/3011 , H01L2924/00
摘要: A method for fabricating wafer-level packages including lateral interconnects. The method includes precutting a cover wafer at the locations where the cover wafer will be completely cut through to separate the wafer-level packages. The cover wafer is bonded to the substrate wafer using bonding rings so as to seal the integrated circuit within a cavity between the cover wafer and the substrate wafer, where the precuts face the substrate wafer. The cover wafer is then cut at the precut locations to remove the unwanted portions of the cover wafer between the packages and expose contacts or probe pads for the lateral interconnects. The substrate wafer is then cut between the wafer-level packages to separate the packages.
摘要翻译: 一种用于制造包括横向互连的晶片级封装件的方法。 该方法包括在覆盖晶片将被完全切割穿过的位置处去除覆盖晶片以分离晶片级封装。 覆盖晶片使用接合环结合到基板晶片,以便将集成电路密封在盖晶片和基板晶片之间的空腔内,其中预切线面对基板晶片。 然后在预切割位置切割覆盖晶片以去除封装之间的覆盖晶片的不需要的部分,并暴露用于横向互连的触点或探针焊盘。 然后在晶片级封装之间切割衬底晶片以分离封装。
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