OLED device with short reduction
    1.
    发明授权
    OLED device with short reduction 有权
    OLED器件减少

    公开(公告)号:US07687990B2

    公开(公告)日:2010-03-30

    申请号:US11734485

    申请日:2007-04-12

    IPC分类号: H01J1/62

    摘要: In an OLED device having a substrate, a first electrode layer disposed over the substrate, an inorganic short reduction layer disposed over the first electrode layer, an organic electroluminescent medium disposed over the short reduction layer, and a second electrode layer over the electroluminescent medium, a feature is the inclusion of a mixture of ZnS, SiO2, and ITO in the short reduction layer wherein the ratio of In atoms to Zn atoms is in the range of from 0.90 to 2.37.

    摘要翻译: 在具有衬底的OLED器件中,设置在衬底上的第一电极层,设置在第一电极层上的无机短路还原层,设置在短还原层上的有机电致发光介质和位于电致发光介质上的第二电极层, 其特征是在短的还原层中包含ZnS,SiO 2和ITO的混合物,其中In原子与Zn原子的比例在0.90-2.73的范围内。

    OLED DEVICE WITH SHORT REDUCTION
    2.
    发明申请
    OLED DEVICE WITH SHORT REDUCTION 有权
    具有短缩的OLED器件

    公开(公告)号:US20080252208A1

    公开(公告)日:2008-10-16

    申请号:US11734485

    申请日:2007-04-12

    IPC分类号: H01J63/04

    摘要: In an OLED device having a substrate, a first electrode layer disposed over the substrate, an inorganic short reduction layer disposed over the first electrode layer, an organic electroluminescent medium disposed over the short reduction layer, and a second electrode layer over the electroluminescent medium, a feature is the inclusion of a mixture of ZnS, SiO2, and ITO in the short reduction layer wherein the ratio of In atoms to Zn atoms is in the range of from 0.90 to 2.37.

    摘要翻译: 在具有衬底的OLED器件中,设置在衬底上的第一电极层,设置在第一电极层上的无机短路还原层,设置在短还原层上的有机电致发光介质和位于电致发光介质上的第二电极层, 其特征是在短的还原层中包含ZnS,SiO 2和ITO的混合物,其中In原子与Zn原子的比例在0.90至2.37的范围内。