In-plane toroidal memory cell with vertically stepped conductors
    3.
    发明授权
    In-plane toroidal memory cell with vertically stepped conductors 有权
    具有垂直阶梯导体的平面内环形存储单元

    公开(公告)号:US06906947B2

    公开(公告)日:2005-06-14

    申请号:US10080847

    申请日:2002-02-22

    IPC分类号: G11C11/155 G11C11/00

    CPC分类号: G11C11/155

    摘要: A magnetic random access memory device uses toroid-like magnetic memory cells. An axial opening extends through each of the memory cells and is generally aligned along a first axis. A first conductor and a second conductor pass through the axial opening of each memory cell and are generally aligned with the first axis.

    摘要翻译: 磁性随机存取存储器件使用环形磁性存储器单元。 轴向开口延伸穿过每个存储单元,并且通常沿着第一轴线对齐。 第一导体和第二导体穿过每个存储单元的轴向开口并且大致与第一轴线对齐。