公开(公告)号：US20070051346A1

公开(公告)日：2007-03-08

申请号：US11592973

申请日：2006-11-03

Applicant: Alicia Peterson ,  Christopher Allen ,  Anthony St. Amour ,  John Hamilton

Inventor： Alicia Peterson ,  Christopher Allen ,  Anthony St. Amour ,  John Hamilton

IPC: F02M33/02

CPC classification number: F02M25/089

Abstract: An evaporative emissions canister is used in an automotive evaporative emission system to separate liquid fuel entrained with fuel vapor and to control emission of fuel vapors to the atmosphere, the system including a fuel tank coupled to an automotive engine. The canister includes an integrally molded housing having side walls, a top wall and a bottom wall; a hydrocarbon-adsorbing material disposed therein so as to provide a vapor adsorbent chamber for adsorbing hydrocarbon fuel vapor flowing therethrough; and a liquid-fuel trap located above the vapor adsorbent chamber for separating fuel vapor and liquid fuel. A method is provided for preventing or reducing hydrocarbon emissions to the atmosphere.

Abstract translation: 蒸发排放罐用于汽车蒸发排放系统以分离带有燃料蒸汽的液体燃料并控制燃料蒸气向大气的排放，该系统包括与汽车发动机连接的燃料箱。 罐包括具有侧壁，顶壁和底壁的整体模制的壳体; 设置在其中的烃吸附材料，以提供用于吸附流过其中的烃类燃料蒸气的蒸汽吸附剂室; 以及位于蒸汽吸附剂室上方的用于分离燃料蒸汽和液体燃料的液体 - 燃料捕集器。 提供了一种防止或减少碳氢化合物排放到大气中的方法。

公开(公告)号：US20160225715A1

公开(公告)日：2016-08-04

申请号：US15022434

申请日：2013-11-20

Applicant: Anthony ST. AMOUR ,  Joseph STEIGERWALD ,  INTEL CORPORATION

Inventor： Anthony St. Amour ,  Joseph Steigerwald

IPC: H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76865 ,  H01L21/76895 ,  H01L23/485 ,  H01L23/5283 ,  H01L23/53266 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A transistor contact of the present description may be fabricated by forming a via through an interlayer dielectric layer disposed on a microelectronic substrate, wherein the via extends from a first surface of the interlayer dielectric layer to the microelectronic substrate forming a via sidewall and exposing a portion of the microelectronic substrate. A conformal contact material layer may then be formed adjacent the exposed portion of the microelectronic substrate, the at least one via sidewall, and the interlayer dielectric first surface. An etch block plug formed within the via proximate the microelectronic substrate. The contact material layer not protected by the etch block plug may be removed followed by the removal of the etch block plug and the filling the via with a conductive material.

Abstract translation: 本描述的晶体管接触可以通过形成通过设置在微电子衬底上的层间电介质层的通孔来制造，其中通孔从层间电介质层的第一表面延伸到形成通孔侧壁的微电子衬底， 的微电子衬底。 然后可以在微电子衬底，至少一个通孔侧壁和层间电介质第一表面的暴露部分附近形成共形接触材料层。 在靠近微电子衬底的通孔内形成蚀刻块塞。 不被蚀刻块塞子保护的接触材料层可以被去除，随后去除蚀刻块塞和用导电材料填充孔。

公开(公告)号：US07314836B2

公开(公告)日：2008-01-01

申请号：US10881052

申请日：2004-06-30

Applicant: Oleg Golonzka ,  Ajay K. Sharma ,  Nadia M. Rahhal-Orabi ,  Anthony St. Amour ,  James S. Chung

Inventor： Oleg Golonzka ,  Ajay K. Sharma ,  Nadia M. Rahhal-Orabi ,  Anthony St. Amour ,  James S. Chung

IPC: H01L21/31

CPC classification number: H01L21/0217 ,  H01L21/0214 ,  H01L21/3143 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/66636 ,  H01L29/7843

Abstract: The performance of NMOS and PMOS regions of integrated circuits is improved. Embodiments of the invention include forming a first dielectric layer optimized for n-doped regions over the n-doped regions and forming a second dielectric layer optimized for p-doped regions over p-doped regions.

Abstract translation: 提高了集成电路的NMOS和PMOS区域的性能。 本发明的实施例包括形成针对n掺杂区域上的n掺杂区域优化的第一电介质层，并形成对p掺杂区域上的p掺杂区域优化的第二介电层。