公开(公告)号：US06785973B1

公开(公告)日：2004-09-07

申请号：US10129263

申请日：2002-08-20

申请人： Antonius Johannes Janssen

发明人： Antonius Johannes Janssen

IPC分类号： G01B310

CPC分类号： G01B5/004

摘要： A measuring device including a moveable measuring probe and sensors coupled to the measuring probe for providing position data of the measuring probe. The measuring probe is coupled, by a cord or a wire, to a first sensor for measuring a length or change in length of the cord or wire, and to a second sensor for measuring an angle or angular displacement of the cord or the wire. The obtained position data can be graphically represented and/or used for driving an automatic machining apparatus for producing a product corresponding to the measured data.

摘要翻译： 一种测量装置，包括可移动测量探头和耦合到测量探头的传感器，用于提供测量探针的位置数据。 测量探针通过绳索或导线耦合到用于测量绳索或线的长度或变化的第一传感器以及用于测量绳索或线的角度或角位移的第二传感器。 获得的位置数据可以以图形方式表示和/或用于驱动用于产生与测量数据相对应的产品的自动加工装置。

公开(公告)号：US06775350B2

公开(公告)日：2004-08-10

申请号：US10242924

申请日：2002-09-13

申请人： Catharina Huberta Henrica Emons ,  Henricus Godefridus Rafael Maas ,  Theodorus Martinus Michielsen ,  Ronald Dekker ,  Antonius Johannes Janssen ,  Ingrid Annemarie Rink

发明人： Catharina Huberta Henrica Emons ,  Henricus Godefridus Rafael Maas ,  Theodorus Martinus Michielsen ,  Ronald Dekker ,  Antonius Johannes Janssen ,  Ingrid Annemarie Rink

IPC分类号： G01N2320

CPC分类号： G01N23/225 ,  G01N23/223 ,  G01N2223/076 ,  H01L22/12

摘要： A method of examining a wafer of crystalline semiconductor material by means of X-rays, in which method a surface of the wafer is scanned by means of an X-ray beam and secondary radiation generated by said X-ray beam is detected. Prior to the examination the surface of the wafer which is to be scanned by the X-ray beam during the examination is glued to a substrate, after which crystalline semiconductor material is removed at the side which is then exposed, removal taking place as far as the top layer which adjoins the surface. The top layer can thus be examined without the examination being affected by crystal defects or impurities present in layers of the wafer which are situated underneath the top layer.

摘要翻译： 通过X射线检查晶体半导体材料的晶片的方法，其中通过X射线束扫描晶片的表面，并且检测由所述X射线束产生的二次辐射。 在检查之前，将在检查期间由X射线束扫描的晶片的表面胶合到基底上，然后在暴露的一侧去除结晶半导体材料，然后将其移除至 邻接表面的顶层。 因此可以检查顶层，而不检查晶体缺陷或存在于位于顶层下方的晶片层中的杂质。