公开(公告)号：US20020153103A1

公开(公告)日：2002-10-24

申请号：US10036067

申请日：2001-10-19

Applicant: Applied Process Technologies, Inc.

Inventor： John E. Madocks

IPC: C23F001/00 ,  C23C016/00

CPC classification number: H01J37/32623 ,  C23C14/352 ,  C23C16/503 ,  H01J37/3266

Abstract: Magnetically enhanced glow discharge devices are disclosed for the purpose of PECVD, etching or treating a substrate in a vacuum chamber. Two cathode surfaces are separated by a gap. A mirror magnetic field emanates from the cathode surfaces and passes through the gap. An anode structure forms diverging electric fields from each cathode to the anode, where the electric fields pass through the magnetic field 360 degrees around the dipole magnetic field. A closed loop electron trap is formed by the diverging electric fields and the expanding magnetic field in the gap. With a chamber pressure in the range of 0.1 to 100 mTorr and an applied voltage between the cathode and anode surfaces, a plasma is formed in the electron trap and in the plane of the trap. By shaping the plasma poles and exposing the sides of the cathode surfaces to the substrate, the created Hall current of the plasma can be brought into direct contact with the substrate.

Abstract translation: 公开了用于PECVD，蚀刻或处理真空室中的衬底的磁增强辉光放电装置。 两个阴极表面被间隙隔开。 镜面磁场从阴极表面发出并穿过间隙。 阳极结构形成从每个阴极到阳极的发散电场，其中电场围绕偶极子磁场穿过磁场360度。 通过发散电场和间隙中的扩展磁场形成闭环电子阱。 在腔室压力为0.1至100mTorr的范围内，并且在阴极和阳极表面之间施加的电压，在电子阱中和阱的平面中形成等离子体。 通过使等离子体极成形并将阴极表面的侧面暴露于基板，可以使等离子体产生的霍尔电流与基板直接接触。