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    Hot wire production of single-wall and multi-wall carbon nanotubes
    1.
    发明授权
    Hot wire production of single-wall and multi-wall carbon nanotubes 失效
    单壁和多壁碳纳米管的热丝生产

    公开(公告)号：US07820132B2

    公开(公告)日：2010-10-26

    申请号：US10548924

    申请日：2003-03-13

    申请人： Anne C. Dillon ,  Archie H. Mahan ,  Jeffrey L. Alleman

    发明人： Anne C. Dillon ,  Archie H. Mahan ,  Jeffrey L. Alleman

    IPC分类号： D01F9/12

    CPC分类号： B82Y30/00 ,  D01F9/127 ,  Y10S977/843

    摘要： Apparatus (210) for producing a multi-wall carbon nanotube (213) may comprise a process chamber (216), a furnace (217) operatively associated with the process chamber (216), and at least one filament (218) positioned within the process chamber (216). At least one power supply (220) operatively associated with the at least one filament (218) heats the at least one filament (218) to a process temperature. A gaseous carbon precursor material (214) operatively associated with the process chamber (216) provides carbon for forming the multi-wall carbon nanotube (213). A metal catalyst material (224) operatively associated with the process (216) catalyzes the formation of the multi-wall carbon nanotube (213).

    摘要翻译： 用于生产多壁碳纳米管（213）的装置（210）可以包括处理室（216），与处理室（216）可操作地相关联的炉（217）和位于处理室（216）内的至少一个灯丝 处理室（216）。 与至少一个细丝（218）可操作地相关联的至少一个电源（220）将至少一个细丝（218）加热到工艺温度。 与处理室（216）可操作地相关联的气态碳前体材料（214）提供用于形成多壁碳纳米管（213）的碳。 与工艺（216）可操作地相关联的金属催化剂材料（224）催化多壁碳纳米管（213）的形成。

    Deposition of device quality low H content, amorphous silicon films
    2.
    发明授权
    Deposition of device quality low H content, amorphous silicon films 失效
    器件质量沉积低H含量，非晶硅膜

    公开(公告)号：US5397737A

    公开(公告)日：1995-03-14

    申请号：US253840

    申请日：1994-06-03

    申请人： Archie H. Mahan ,  Jeffrey C. Carapella ,  Alan C. Gallagher

    发明人： Archie H. Mahan ,  Jeffrey C. Carapella ,  Alan C. Gallagher

    IPC分类号： C23C16/24 ,  H01L21/205 ,  H01L31/20 ,  H01L21/203

    CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.

    摘要翻译： 通过使硅烷气体（SiH 4）流过高温，2000℃，钨（W）长丝附近，沉积高质量，低氢含量的氢化非晶硅（a-Si：H）膜 高温400℃，底物在低压，8mTorr，沉积室内。 硅烷气体被分解成原子氢和硅，反过来又优选不超过20-30次，然后沉积在热的基底上。 这样生产的氢化非晶硅膜只有大约一个原子百分比的氢，尽管氢含量降低，但具有电气，化学和结构特性的器件质量。