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    Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates
    1.
    发明授权
    Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates 失效
    以高沉积速率沉积器件质量，低含氢量，氢化非晶硅

    公开(公告)号：US06468885B1

    公开(公告)日：2002-10-22

    申请号：US09669248

    申请日：2000-09-25

    申请人： Archie Harvin Mahan ,  Edith C. Molenbroek ,  Alan C. Gallagher ,  Brent P. Nelson ,  Eugene Iwaniczko ,  Yueqin Xu

    发明人： Archie Harvin Mahan ,  Edith C. Molenbroek ,  Alan C. Gallagher ,  Brent P. Nelson ,  Eugene Iwaniczko ,  Yueqin Xu

    IPC分类号： H01L2176

    CPC分类号： C23C16/24 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： A method of fabricating device quality, thin-film a-Si:H for use as semiconductor material in photovoltaic and other devices, comprising in any order; positioning a substrate in a vacuum chamber adjacent a plurality of heatable filaments with a spacing distance L between the substrate and the filaments; heating the filaments to a temperature that is high enough to obtain complete decomposition of silicohydride molecules that impinge said filaments into Si and H atomic species; providing a flow of silicohydride gas, or a mixture of silicohydride gas containing Si and H, in said vacuum chamber while maintaining a pressure P of said gas in said chamber, which, in combination with said spacing distance L, provides a P×L product in a range of 10-300 mT-cm to ensure that most of the Si atomic species react with silicohydride molecules in the gas before reaching the substrate, to thereby grow a a-Si:H film at a rate of at least 50 Å/sec.; and maintaining the substrate at a temperature that balances out-diffusion of H from the growing a-Si:H film with time needed for radical species containing Si and H to migrate to preferred bonding sites.

    摘要翻译： 一种制造器件质量的方法，薄膜a-Si：H用作光伏和其他器件中的半导体材料，包括任何顺序; 将基板定位在邻近多个可加热长丝的真空室中，所述可加热长丝在基底和长丝之间具有间隔距离L; 将长丝加热到足够高的温度以获得将所述长丝冲入Si和H原子物质的硅化物分子的完全分解的温度; 在所述真空室中提供硅氢化物气体流，或含有Si和H的硅氢化合物的混合物，同时保持所述室中的所述气体的压力P，其与所述间隔距离L组合在一起提供PxL产物 范围为10-300mT-cm，以确保大多数Si原子物质在到达衬底之前与气体中的硅化氢分子反应，从而以至少50 /秒的速率生长a-Si：H膜。 ; 并且将衬底保持在平衡H生长的a-Si：H膜的扩散的温度，同时含有Si和H的自由基物质所需的时间迁移到优选的键合位置。

    Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates with increased stability using the hot wire filament technique
    3.
    发明授权
    Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates with increased stability using the hot wire filament technique 失效
    使用热丝丝技术，以高沉积速率沉积器件质量，低氢含量，氢化非晶硅，并增加稳定性

    公开(公告)号：US6124186A

    公开(公告)日：2000-09-26

    申请号：US66276

    申请日：1998-04-24

    申请人： Edith C. Molenbroek ,  Archie Harvin Mahan ,  Alan C. Gallagher

    发明人： Edith C. Molenbroek ,  Archie Harvin Mahan ,  Alan C. Gallagher

    IPC分类号： C23C16/24 ,  H01L21/205 ,  H01L31/20 ,  H01L2/203

    CPC分类号： H01L31/202 ,  C23C16/24 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  Y02E10/50 ,  Y02P70/521

    摘要： A method or producing hydrogenated amorphous silicon on a substrate, comprising the steps of: positioning the substrate in a deposition chamber at a distance of about 0.5 to 3.0 cm from a heatable filament in the deposition chamber; maintaining a pressure in said deposition chamber in the range of about 10 to 100 millitorr and pressure times substrate-filament spacing in the range of about 10 to 100 millitorr-cm, heating the filament to a temperature in the range of about 1,500 to 2,000.degree. C., and heating the substrate to a surface temperature in the range of about 280 to 475.degree. C.; and flowing silicohydride gas into the deposition chamber with said heated filament, decomposing said silicohydride gas into silicon and hydrogen atomic species and allowing products of gas reactions between said atomic species and the silicohydride gas to migrate to and deposit on said substrate while adjusting and maintaining said pressure times substrate-filament spacing in said deposition chamber at a value in said 10 to 100 millitorr range to produce statistically about 3 to 50 atomic collisions between the silicon and hydrogen atomic species migrating to said substrate and undecomposed molecules of the silane or other silicohydride gas in the deposition chamber.

    摘要翻译： 一种在衬底上产生氢化非晶硅的方法或方法，其特征在于包括以下步骤：将沉积室中的衬底定位在沉积室中距离可沉积细丝约0.5-3.0cm处; 将所述沉积室中的压力维持在约10至100毫托的范围内，并将基板 - 丝间隔的压力乘以约10至100毫托立方厘米的范围，将该丝加热至约1,500至2,000度的温度 并将基材加热至约280至475℃范围内的表面温度; 并用所述加热的细丝将硅氢化合物气体流入沉积室，将所述硅氢化合物气体分解成硅和氢原子物质，并允许所述原子物质与硅氢化物气体之间的气体反应产物迁移并沉积在所述衬底上，同时调节和保持所述 以所述10至100毫托范围内的值将所述沉积室中的衬底 - 丝条间隔压力乘以衬底 - 丝条间隔，以在迁移至所述衬底的硅和氢原子物质之间产生统计学上约3至50个原子碰撞和未分解的硅烷或其它硅氢化物气体分子 在沉积室中。