公开(公告)号：US06284644B1

公开(公告)日：2001-09-04

申请号：US09684518

申请日：2000-10-10

申请人： Arthur Khoon Siah Aug ,  Feng Chen ,  Qiong Li

发明人： Arthur Khoon Siah Aug ,  Feng Chen ,  Qiong Li

IPC分类号： H01L214763

CPC分类号： H01L21/76829 ,  G01V3/15 ,  H01L21/76801 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： A method of forming a metal interconnect within a fluorinated silica glass dielectric layer while preventing outgassing from the FSG dielectric layer, comprising the following steps. A semiconductor structure having a metal structure, with an overlying liner layer, formed thereover is provided. A FSG dielectric layer is formed over the liner layer. The FSG dielectric layer having an exposed upper surface. The FSG dielectric layer is treated with a first nitrogen gas/plasma treatment to form a fluorine depleted upper capping layer from the exposed surface of the FSG dielectric layer. A TEOS oxide layer is formed over the upper capping layer. The TEOS oxide layer is planarized to form a planarized TEOS oxide layer. The planarized TEOS oxide layer, the upper capping layer, the treated FSG dielectric layer, and the liner layer are patterned to form a via hole therethrough, exposing a portion of the metal structure and exposing sidewalls of the patterned treated FSG dielectric layer within the via opening. At least the exposed sidewalls of the patterned treated fluorinated silicon glass dielectric layer within the via opening is treated with a second nitrogen gas/plasma treatment to form a fluorine depleted sidewall capping layer from the exposed sidewalls of the patterned treated fluorinated silicon glass dielectric layer, wherein the upper and sidewall capping layers prevent the outgassing from the patterned FSG dielectric layer. A metal interconnect is formed within the via opening.

摘要翻译： 一种在氟化石英玻璃介电层内形成金属互连的方法，同时防止从FSG介电层脱气，包括以下步骤。 提供具有金属结构的半导体结构，其上形成有覆盖衬垫层。 FSG电介质层形成在衬层上。 FSG电介质层具有暴露的上表面。 用第一氮气/等离子体处理处理FSG电介质层，以从FSG电介质层的暴露表面形成耗尽氟的上覆盖层。 在上盖层上形成TEOS氧化物层。 将TEOS氧化物层平坦化以形成平坦化的TEOS氧化物层。 对平坦化的TEOS氧化物层，上覆盖层，经处理的FSG电介质层和衬里层进行图案化以形成穿过其中的通孔，暴露金属结构的一部分并暴露图案化处理的FSG介电层的侧壁在通孔内 开放 通过第二氮气/等离子体处理处理至少通孔开口内图案化处理的氟化硅玻璃介电层的暴露的侧壁，以从图案化处理的氟化硅玻璃介电层的暴露的侧壁形成氟耗尽的侧壁封盖层， 其中上侧壁封盖层和侧壁封盖层防止从图案化的FSG电介质层脱气。 在通孔开口内形成金属互连。