公开(公告)号：US5662740A

公开(公告)日：1997-09-02

申请号：US323961

申请日：1994-10-17

申请人： Kazuhito Yamasawa ,  Atsushi Oido ,  Akio Nakata ,  Nobuya Uchida

发明人： Kazuhito Yamasawa ,  Atsushi Oido ,  Akio Nakata ,  Nobuya Uchida

IPC分类号： C30B19/00 ,  C30B19/02 ,  C30B21/02

CPC分类号： C30B19/00 ,  C30B19/02 ,  C30B29/28

摘要： In the manufacture of a single crystal film by epitaxial growth method, defects such as cracking are avoided by increasing the deviation of the lattice constant of the resulting film in the direction of growth from the substrate. Preferably, the deviation is increased at the rate of (0.4.about.9).times.10.sup.-4 %/.mu.m.

摘要翻译： 在通过外延生长法制造单晶膜时，通过增加所得膜在与衬底的生长方向上的晶格常数的偏差来避免诸如裂纹的缺陷。 优选地，偏差以（0.4差9）×10 -4％/μm的速率增加。

公开(公告)号：US5434101A

公开(公告)日：1995-07-18

申请号：US25193

申请日：1993-03-02

申请人： Kazuhito Yamasawa ,  Atsushi Oido ,  Akio Nakata ,  Nobuya Uchida

发明人： Kazuhito Yamasawa ,  Atsushi Oido ,  Akio Nakata ,  Nobuya Uchida

IPC分类号： C30B19/00 ,  C30B19/02 ,  H01L21/20

CPC分类号： C30B19/00 ,  C30B19/02 ,  C30B29/28

摘要： In the manufacture of a single crystal film by epitaxial growth method, defects such as cracking are avoided by increasing the deviation of the lattice constant of the resulting film in the direction of growth from the substrate. Preferably, the deviation is increased at the rate of (0.4.about.9).times.10.sup.-4 %/.mu.m.

摘要翻译： 在通过外延生长法制造单晶膜时，通过增加所得膜在与衬底的生长方向上的晶格常数的偏差来避免诸如裂纹的缺陷。 优选地，偏差以（0.4差9）×10 -4％/μm的速率增加。