公开(公告)号：US06992319B2

公开(公告)日：2006-01-31

申请号：US10176787

申请日：2002-06-24

申请人： Ayub M Fahimulla ,  Harry Stephen Hier ,  Olaleye A. Aina

发明人： Ayub M Fahimulla ,  Harry Stephen Hier ,  Olaleye A. Aina

IPC分类号： H01L29/15

CPC分类号： B82Y10/00 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/7785 ,  H01L29/802

摘要： Alternate layers of wide band gap and narrow band gaps of different kinds of semiconductors are used to form multiple channels of a FET. The channels are doped or formed as 2-DEG/2-DHG in narrow band semiconductor by charge supply layer in the wide band gap semiconductor. The different kinds of semiconductors form heterojunctions to confine the electrons/holes in separate thin spikes layers. A number of spikes (3–10 nm thick) of different doped or 2-DEG/2-DHG concentrations in various channels can result in overall electron concentration gradient such as a 1/x3 electron/hole concentrations profile. Such an electron/hole concentration gradient can result in a linear variation of drain current with voltage to obtain a wide dynamic range.

摘要翻译： 使用不同种类的半导体的宽带隙和窄带隙的交替层来形成FET的多个通道。 在窄带半导体中，通过在宽带隙半导体中的电荷供给层将沟道掺杂或形成为2-DEG / 2-DHG。 不同种类的半导体形成异质结以将电子/空穴限制在单独的薄尖峰层中。 不同通道中不同掺杂浓度或2-DEG / 2-DHG浓度的多个尖峰（3-10nm厚）可导致总电子浓度梯度，例如1 / x 3电子/孔 浓度分布。 这种电子/空穴浓度梯度可以导致漏极电流与电压的线性变化，以获得宽的动态范围。