利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

10 条记录 (耗时 0.02 秒)

    Ultra-linear multi-channel field effect transistor
    1.
    发明授权
    Ultra-linear multi-channel field effect transistor 失效
    超线性多通道场效应晶体管

    公开(公告)号：US06992319B2

    公开(公告)日：2006-01-31

    申请号：US10176787

    申请日：2002-06-24

    申请人： Ayub M Fahimulla ,  Harry Stephen Hier ,  Olaleye A. Aina

    发明人： Ayub M Fahimulla ,  Harry Stephen Hier ,  Olaleye A. Aina

    IPC分类号： H01L29/15

    CPC分类号： B82Y10/00 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/7785 ,  H01L29/802

    摘要： Alternate layers of wide band gap and narrow band gaps of different kinds of semiconductors are used to form multiple channels of a FET. The channels are doped or formed as 2-DEG/2-DHG in narrow band semiconductor by charge supply layer in the wide band gap semiconductor. The different kinds of semiconductors form heterojunctions to confine the electrons/holes in separate thin spikes layers. A number of spikes (3–10 nm thick) of different doped or 2-DEG/2-DHG concentrations in various channels can result in overall electron concentration gradient such as a 1/x3 electron/hole concentrations profile. Such an electron/hole concentration gradient can result in a linear variation of drain current with voltage to obtain a wide dynamic range.

    摘要翻译： 使用不同种类的半导体的宽带隙和窄带隙的交替层来形成FET的多个通道。 在窄带半导体中，通过在宽带隙半导体中的电荷供给层将沟道掺杂或形成为2-DEG / 2-DHG。 不同种类的半导体形成异质结以将电子/空穴限制在单独的薄尖峰层中。 不同通道中不同掺杂浓度或2-DEG / 2-DHG浓度的多个尖峰（3-10nm厚）可导致总电子浓度梯度，例如1 / x 3电子/孔 浓度分布。 这种电子/空穴浓度梯度可以导致漏极电流与电压的线性变化，以获得宽的动态范围。

    Monolithic photoreceiver technology for free space optical networks
    2.
    发明授权
    Monolithic photoreceiver technology for free space optical networks 失效
    用于自由空间光网络的单片光接收器技术

    公开(公告)号：US06987306B2

    公开(公告)日：2006-01-17

    申请号：US10621203

    申请日：2003-07-17

    申请人： Ayub M Fathimulla ,  Olaleye A. Aina ,  Harry Stephen Hier

    发明人： Ayub M Fathimulla ,  Olaleye A. Aina ,  Harry Stephen Hier

    IPC分类号： H01L27/14

    CPC分类号： B82Y10/00 ,  H01L27/1446 ,  H01L29/7376 ,  H01S5/0014 ,  H01S5/02248 ,  H01S5/18305 ,  H01S5/423 ,  H01S5/50

    摘要： This invention describes an approach for monolithically integrating all the components of a photoreceiver—optical amplifier, optical band-pass filter, and photodiode module—on a single chip. The photoreceiver array employs unique optical amplifier and conversion technologies that provides the ultra-sensitivity required for free space optical communications networks. As an example, by monolithically integrating a vertical cavity surface emitting laser-diode (VCSEL) optical preamplifier with a photodiode receiver and related amplifiers and filters on the same chip, sensitivities as low as −47 dBm (62 photons/bit at 2.5 Gb/s), along with an order of magnitude reduction in size, weight, and power consumption over comparable commercial-off-the-shelf (COTS) components can be demonstrated. In accordance with another aspect of the present invention, the concept of monolithic integration of optical amplifier with photodetector is extended to lasers, another amplifier and modulators covering ultra violet to very long wavelength infrared using the InP, GaAs, GaSb, InAs, InSb, SiGe, SiC and GaN etc based technologies.

    摘要翻译： 本发明描述了在单个芯片上将光接收器 - 光放大器，光带通滤波器和光电二极管模块的所有部件单片集成的方法。 光接收器阵列采用独特的光放大器和转换技术，提供了自由空间光通信网络所需的超灵敏度。 作为示例，通过将垂直腔表面发射激光二极管（VCSEL）光学前置放大器与光电二极管接收器和相关放大器和滤波器整体集成在同一芯片上，灵敏度低至-47dBm（在2.5Gb / s时为62个光子/ （COTS）组件的大小，重量和功耗的数量级可以被证明。 根据本发明的另一方面，光放大器与光电检测器的单片集成的概念被扩展到激光器，另一个放大器和使用InP，GaAs，GaSb，InAs，InSb，SiGe覆盖紫外到非常长波长红外的调制器 ，SiC和GaN等技术。

    Field effect transistor-bipolar transistor Darlington pair
    4.
    发明授权
    Field effect transistor-bipolar transistor Darlington pair 失效
    场效应晶体管 - 双极晶体管达林顿对

    公开(公告)号：US5086282A

    公开(公告)日：1992-02-04

    申请号：US593459

    申请日：1990-10-05

    申请人： Olaleye A. Aina ,  Eric A. Martin

    发明人： Olaleye A. Aina ,  Eric A. Martin

    IPC分类号： H01L27/06 ,  H03F3/345

    CPC分类号： H03F3/345 ,  H01L27/0605

    摘要： A high frequency amplifying device comprises a field effect transistor-bipolar transistor darlington pair. Such a device combines the main desirable features of both field effect transistors and bipolar transistors, therefore, having a high input impedance that is typical of FETs and a high transconductance (or high current gain) which is typical of bipolar transistors.

    摘要翻译： 高频放大装置包括场效应晶体管 - 双极晶体管达林顿对。 这种器件组合了场效应晶体管和双极晶体管的主要期望特征，因此，具有典型的FET的高输入阻抗和典型的双极晶体管的高跨导（或高电流增益）。

    Method of fabricating semiconductor device having low resistance non-alloyed contact layer
    5.
    发明授权
    Method of fabricating semiconductor device having low resistance non-alloyed contact layer 失效
    制造具有低电阻非合金接触层的半导体器件的方法

    公开(公告)号：US4662060A

    公开(公告)日：1987-05-05

    申请号：US808916

    申请日：1985-12-13

    申请人： Olaleye A. Aina ,  Amir A. Lakhani

    发明人： Olaleye A. Aina ,  Amir A. Lakhani

    IPC分类号： H01L21/28 ,  H01L21/265 ,  H01L21/285 ,  H01L21/338 ,  H01L29/812 ,  H01S5/00 ,  H01L21/283

    CPC分类号： H01L29/66863 ,  H01L21/2656 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/66878 ,  Y10S148/14 ,  Y10S438/951

    摘要： A method of forming a semiconductor device having a non-alloyed contact layer. An active region is formed in a substrate and the non-alloyed contact layer is formed in the active region, the barrier height of source and drain electrodes for the non-alloyed contact layer being lower than the barrier height of the source and drain electrodes for the active region or the substrate. The preferred method of forming the non-alloyed contact layer is high dose implantation of an element selected in accordance with the substrate material. For example, if the substrate is GaAs the non-alloyed contact layer is formed by implanting In, and if the substrate is InP the non-alloyed contact layer is formed by implanting As or Sb.

    摘要翻译： 一种形成具有非合金接触层的半导体器件的方法。 在基板中形成有源区，在有源区形成非合金化接触层，非合金化接触层的源电极和漏电极的势垒高度低于源极和漏极的势垒高度， 有源区或基底。 形成非合金化接触层的优选方法是根据基材材料选择的元素的高剂量注入。 例如，如果衬底是GaAs，则通过注入In形成非合金接触层，并且如果衬底是InP，则通过注入As或Sb形成非合金接触层。

    MESFET device having a semiconductor surface barrier layer
    6.
    发明授权
    MESFET device having a semiconductor surface barrier layer 失效
    MESFET器件具有半导体表面阻挡层

    公开(公告)号：US4960718A

    公开(公告)日：1990-10-02

    申请号：US218506

    申请日：1988-07-05

    申请人： Olaleye A. Aina

    发明人： Olaleye A. Aina

    IPC分类号： H01L21/265 ,  H01L21/306 ,  H01L21/76 ,  H01L29/47 ,  H01L29/812

    CPC分类号： H01L29/812 ,  H01L21/2654 ,  H01L21/26546 ,  H01L21/2656 ,  H01L21/30612 ,  H01L21/7605 ,  H01L29/475

    摘要： An InP MESFET having a semiconductor surface barrier layer formed of GaInP or AlInP. The semiconductor surface barrier layer is formed between an active layer and a gate electrode and the barrier height of the gate for the semiconductor surface barrier layer is higher than the barrier height of the gate for InP. In a method of forming an InP MESFET according to the present invention, the semiconductor surface barrier layer is formed by high dose implantation of Ga or Al into the active region. Surface barrier layers formed of other compounds, for example GaInAsP or AlInAsP, which have a lattice match with InP can be formed by other methods such as epitaxial growth.

    摘要翻译： 具有由GaInP或AlInP形成的半导体表面阻挡层的InP MESFET。 半导体表面阻挡层形成在有源层和栅极之间，并且用于半导体表面阻挡层的栅极的势垒高度高于InP栅极的势垒高度。 在根据本发明的形成InP MESFET的方法中，半导体表面势垒层通过Ga或Al的高剂量注入形成到有源区中。 与InP具有晶格匹配的其它化合物（例如GaInAsP或AlInAsP）形成的表面阻挡层可以通过其它方法如外延生长形成。

    Method for making a heterojunction bipolar transistor with improved high frequency response
    9.
    发明授权
    Method for making a heterojunction bipolar transistor with improved high frequency response 失效
    制造具有改善的高频响应的异质结双极晶体管的方法

    公开(公告)号：US5242843A

    公开(公告)日：1993-09-07

    申请号：US967324

    申请日：1992-10-28

    申请人： Olaleye A. Aina

    发明人： Olaleye A. Aina

    IPC分类号： H01L21/28 ,  H01L21/331 ,  H01L29/737

    CPC分类号： H01L29/66318 ,  H01L21/28 ,  H01L29/7371 ,  Y10S148/072

    摘要： A method for making a heterojunction bipolar transistor in which the collector (46) is epitaxially grown on the subcollector layer (36) through a hole (42) formed in a layer of insulating material (40) deposited on the subcollector layer (36). A base (48) is epitaxially grown on the collector (46). Because of unequal lateral and vertical growth rates, the peripheral region of the base extends over the layer of insulating material. The n and n.sup.+ layers (50, 52) of the second type of semiconducting material are sequentially grown on the base and an n.sup.+ layer (54) of the first type of semiconducting material is grown on the sequentially grown layers (50, 52). The n.sup.+ layer (54) and the sequentially grown layer (50, 52) are etched to form an emitter mesa over the collector (46) leaving exposed the peripheral portion of the base (48) extending over the layer of insulating material surrounding the hole (42). Metallic electrodes (62, 64 and 68) are then deposited which electrically contact the base (48), the emitter (54) and the subcollector (36).

    摘要翻译： 一种用于制造异质结双极晶体管的方法，其中集电体（46）通过形成在沉积在子集电极层（36）上的绝缘材料层（40）中的孔（42）外延生长在子集电极层（36）上。 在集电体（46）上外延生长碱（48）。 由于横向和垂直生长速度不相等，基部的周边区域延伸超过绝缘材料层。 第二类型的半导体材料的n + +层（50,52）在基底上顺序地生长，并且在顺序生长的层（50,52）上生长第一类型的半导体材料的n +层（54）。 蚀刻n +层（54）和顺序生长层（50,52）以在集电体（46）上形成发射极台面，从而暴露在围绕孔的绝缘材料层上延伸的基部（48）的周边部分 （42）。 然后沉积金属电极（62,64和68），其与基底（48），发射器（54）和子集电极（36）电接触。

    Field effect transistor-bipolar transistor darlington pair
    10.
    发明授权
    Field effect transistor-bipolar transistor darlington pair 失效
    场效应晶体管 - 双极晶体管达林顿对

    公开(公告)号：US5187110A

    公开(公告)日：1993-02-16

    申请号：US792104

    申请日：1991-11-13

    申请人： Olaleye A. Aina ,  Eric A. Martin

    发明人： Olaleye A. Aina ,  Eric A. Martin

    IPC分类号： H01L27/06 ,  H03F3/345

    CPC分类号： H03F3/345 ,  H01L27/0605 ,  Y10S148/009

    摘要： A high frequency amplifying device comprises a field effect transistor-bipolar transistor darlington pair. Such a device combines the main desirable features of both field effect transistors and bipolar transistors, therefore, having a high input impedance that is typical of FETs and a high transconductance (or high current gain) which is typical of bipolar transistors.

    摘要翻译： 高频放大装置包括场效应晶体管 - 双极晶体管达林顿对。 这种器件组合了场效应晶体管和双极晶体管的主要期望特征，因此，具有典型的FET的高输入阻抗和典型的双极晶体管的高跨导（或高电流增益）。