公开(公告)号：US06953741B2

公开(公告)日：2005-10-11

申请号：US10634168

申请日：2003-08-05

申请人： Eun-ae Chung ,  Myoung-bum Lee ,  Beom-jun Jim

发明人： Eun-ae Chung ,  Myoung-bum Lee ,  Beom-jun Jim

IPC分类号： H01L21/283 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/04

CPC分类号： H01L21/28525 ,  H01L21/28512 ,  H01L21/76877 ,  H01L21/76886

摘要： Methods for fabricating a contact of a semiconductor device are provided by patterning an interlayer dielectric of the semiconductor device to form a contact hole that exposes a silicon-based region of a first impurity type. The exposed silicon-based region is doped with a gas containing an element of the first impurity type and a contact plug is formed in the contact hole. Contact structure for a semiconductor device are also provided that include an interlayer dielectric of the semiconductor device having a contact hole formed therein that exposes a silicon-based region of a first impurity type. A delta-doped region of the first impurity type is provided in the exposed silicon-based region. A contact plug is provided in the contact hole and on the delta-doped region.

摘要翻译： 通过对半导体器件的层间电介质进行构图以形成露出第一杂质型硅基区域的接触孔来提供制造半导体器件的接触的方法。 暴露的硅基区域掺杂含有第一杂质类型的元素的气体，并且接触孔形成在接触孔中。 还提供了一种半导体器件的接触结构，其包括半导体器件的层间电介质，其具有在其中形成的接触孔，其暴露第一杂质类型的硅基区域。 在暴露的硅基区域中提供第一杂质类型的δ掺杂区域。 在接触孔和δ掺杂区域上提供接触塞。