公开(公告)号：US07408754B1

公开(公告)日：2008-08-05

申请号：US10992591

申请日：2004-11-18

申请人： Hugh Sung-Ki O ,  Chih-Ching Shih ,  Yow-Juang Bill Liu ,  Cheng-Hsiung Huang ,  Wei-Guang Wu ,  Billy Jow-Tai Kwong ,  Yu-Cheng Richard Gao

发明人： Hugh Sung-Ki O ,  Chih-Ching Shih ,  Yow-Juang Bill Liu ,  Cheng-Hsiung Huang ,  Wei-Guang Wu ,  Billy Jow-Tai Kwong ,  Yu-Cheng Richard Gao

IPC分类号： H02H3/20

CPC分类号： H01L27/0262

摘要： The present invention provides an ESD device for protecting thin oxide layers in transistors or capacitors in an integrated circuit. In one embodiment, the ESD device includes a silicon-controlled rectifier (SCR), the SCR including a PNP bipolar transistor and a NPN bipolar transistor. The ESD device further includes first and second trigger devices coupled to the SCR and configured to simultaneously turn on the PNP bipolar transistor and the NPN bipolar transistor in response to an ESD pulse on the ESD device. The base of the NPN bipolar transistor is floating to allow a first external resistor to be connected between the base and emitter of the NPN bipolar transistor. A second external resistor can be connected between the base and emitter of the PNP bipolar transistor.

摘要翻译： 本发明提供一种用于在集成电路中保护晶体管或电容器中的薄氧化物层的ESD装置。 在一个实施例中，ESD器件包括硅控整流器（SCR），SCR包括PNP双极晶体管和NPN双极晶体管。 ESD器件还包括耦合到SCR的第一和第二触发器件，并被配置为响应于ESD器件上的ESD脉冲同时导通PNP双极晶体管和NPN双极晶体管。 NPN双极晶体管的基极是浮置的，以允许第一外部电阻器连接在NPN双极晶体管的基极和发射极之间。 第二个外部电阻可以连接在PNP双极晶体管的基极和发射极之间。