公开(公告)号：US06218085B1

公开(公告)日：2001-04-17

申请号：US09400406

申请日：1999-09-21

申请人： Simon J. Molloy ,  Nace Layadi ,  Allen Yen ,  Brian D. Crevasse ,  Steven A. Lytle

发明人： Simon J. Molloy ,  Nace Layadi ,  Allen Yen ,  Brian D. Crevasse ,  Steven A. Lytle

IPC分类号： G03F736

CPC分类号： G03F7/427

摘要： A method for stripping photoresist material (26) from a semiconductor substrate (16) avoids incorporation of sodium and other contaminant ions from a rework solvent. An oxygen and hydrogen plasma mixture strips the photoresist material without significant introduction of oxygen into the titanium nitride layer (24). Any oxidation of the titanium nitride is reversed by exposing the substrate to an oxygen-free, reducing plasma, such as a hydrogen-containing plasma. The titanium nitride layer is thereby much less susceptible to incorporation of contaminant ions in a subsequent cleaning with rework solvent than a layer which has been extensively oxidized during the plasma stripping process.

摘要翻译： 用于从半导体衬底（16）剥离光致抗蚀剂材料（26）的方法避免了从返工溶剂中引入钠和其它污染物离子。 氧和氢等离子体混合物剥离光致抗蚀剂材料，而不会在氧化钛层（24）内显着引入氧气。 通过将衬底暴露于无氧还原等离子体（例如含氢等离子体）中，氮化钛的任何氧化反转。 因此，氮化钛层比在等离子体剥离过程中已经被广泛氧化的层更难于掺杂污染物离子以进行随后的返工溶剂清洗。