公开(公告)号：US20170316935A1

公开(公告)日：2017-11-02

申请号：US15494245

申请日：2017-04-21

申请人： Lam Research Corporation

发明人： Samantha Tan ,  Jengyi Yu ,  Richard Wise ,  Nader Shamma ,  Yang Pan

IPC分类号： H01L21/027 ,  H01L21/3105 ,  H01J37/32 ,  G03F7/42 ,  H01L21/311

CPC分类号： H01L21/0273 ,  G03F7/427 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/02115 ,  H01L21/3065 ,  H01L21/31056 ,  H01L21/31058 ,  H01L21/31138

摘要： Methods of and apparatuses for processing substrates having carbon-containing material using atomic layer deposition and selective deposition are provided. Methods involve exposing a carbon-containing material on a substrate to an oxidant and igniting a first plasma at a first bias power to modify a surface of the substrate and exposing the modified surface to an inert plasma at a second bias power to remove the modified surface. Methods also involve selectively depositing a second carbon-containing material onto the substrate. ALE and selective deposition may be performed without breaking vacuum.

公开(公告)号：US09613825B2

公开(公告)日：2017-04-04

申请号：US13590083

申请日：2012-08-20

申请人： Roey Shaviv ,  Kirk Ostrowski ,  David Cheung ,  Joon Park ,  Bayu Thedjoisworo ,  Patrick J. Lord

发明人： Roey Shaviv ,  Kirk Ostrowski ,  David Cheung ,  Joon Park ,  Bayu Thedjoisworo ,  Patrick J. Lord

IPC分类号： H01L21/311 ,  G03F7/42 ,  H01J37/32

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01J37/32449 ,  H01J37/32724

摘要： Provided herein are methods and apparatus of hydrogen-based photoresist strip operations that reduce dislocations in a silicon wafer or other substrate. According to various embodiments, the hydrogen-based photoresist strip methods can employ one or more of the following techniques: 1) minimization of hydrogen budget by using short processes with minimal overstrip duration, 2) providing dilute hydrogen, e.g., 2%-16% hydrogen concentration, 3) minimization of material loss by controlling process conditions and chemistry, 4) using a low temperature resist strip, 5) controlling implant conditions and concentrations, and 6) performing one or more post-strip venting processes. Apparatus suitable to perform the photoresist strip methods are also provided.

公开(公告)号：US09469912B2

公开(公告)日：2016-10-18

申请号：US14257744

申请日：2014-04-21

申请人： Lam Research Corporation

发明人： Bryan L. Buckalew ,  Mark L. Rea

IPC分类号： H01L21/00 ,  C25D5/48 ,  H01L21/027 ,  C25D7/12 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

CPC分类号： H01L21/02068 ,  C23C18/1605 ,  C23C18/1803 ,  C25D5/022 ,  C25D5/34 ,  C25D5/48 ,  C25D7/123 ,  G03F7/427 ,  H01J37/32357 ,  H01J37/32889 ,  H01J37/32899 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/6723 ,  H01L21/76862 ,  H01L21/76873 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/0381 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05557 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1161 ,  H01L2224/1181 ,  H01L2224/13018 ,  H01L2224/1308 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/014

摘要： Certain embodiments herein relate to methods and apparatus for processing a partially fabricated semiconductor substrate in a remote plasma environment. The methods may be performed in the context of wafer level packaging (WLP) processes. The methods may include exposing the substrate to a reducing plasma to remove photoresist scum and/or oxidation from an underlying seed layer. In some cases, photoresist scum is removed through a series of plasma treatments involving exposure to an oxygen-containing plasma followed by exposure to a reducing plasma. In some embodiments, an oxygen-containing plasma is further used to strip photoresist from a substrate surface after electroplating. This plasma strip may be followed by a plasma treatment involving exposure to a reducing plasma. The plasma treatments herein may involve exposure to a remote plasma within a plasma treatment module of a multi-tool electroplating apparatus.

摘要翻译： 本文中的某些实施例涉及用于在远程等离子体环境中处理部分制造的半导体衬底的方法和装置。 这些方法可以在晶片级封装（WLP）工艺的上下文中进行。 所述方法可以包括将衬底暴露于还原等离子体以从底层种子层去除光致抗蚀剂浮渣和/或氧化。 在一些情况下，通过一系列等离子体处理除去光致抗蚀剂浮渣，包括暴露于含氧等离子体，然后暴露于还原等离子体。 在一些实施例中，进一步使用含氧等离子体在电镀之后从基板表面剥离光致抗蚀剂。 该等离子体条之后可以进行涉及暴露于还原等离子体的等离子体处理。 这里的等离子体处理可能涉及暴露于多工具电镀设备的等离子体处理模块内的远程等离子体。

公开(公告)号：US20160128200A1

公开(公告)日：2016-05-05

申请号：US14896016

申请日：2014-05-26

申请人： USHIO DENKI KABUSHIKI KAISHA

发明人： Kenichi HIROSE

IPC分类号： H05K3/00 ,  H01L21/67

CPC分类号： H05K3/0055 ,  G03F7/427 ,  H01L21/67115 ,  H05K2203/081 ,  H05K2203/087

摘要： An ashing apparatus includes a treatment chamber having an object to be processed therein, and a lamp chamber having an ultraviolet lamp that radiates the object with an ultraviolet beam. The ashing apparatus is configured to accurately maintain an irradiation distance between a light source and the object. Thus, it is possible to efficiently remove a smear from a wiring board. The treatment chamber and the lamp chamber are moved relative to each other and in parallel to a surface of the object to be processed. The treatment chamber has a stage that supports the object, a gas inlet opening for supplying a treatment gas into the treatment chamber, and a gas outlet opening for discharging the treatment gas. An ultraviolet transmitting window member that partitions the treatment chamber and the lamp chamber from each other is fixed to the treatment chamber.

摘要翻译： 灰化装置包括具有待处理物体的处理室和具有用紫外线照射物体的紫外线灯的灯室。 灰化装置被配置为精确地保持光源和物体之间的照射距离。 因此，可以有效地从布线板去除污迹。 处理室和灯室相对于彼此移动并且平行于被处理物体的表面移动。 处理室具有支撑物体的台，用于将处理气体供给到处理室的气体入口，以及用于排出处理气体的气体出口。 将处理室和灯室分隔开的紫外线透射窗构件被固定到处理室。

公开(公告)号：US20150380219A1

公开(公告)日：2015-12-31

申请号：US14845833

申请日：2015-09-04

申请人： Shibaura Mechatronics Corporation

发明人： Kensuke Demura

IPC分类号： H01J37/32

CPC分类号： H01J37/32715 ,  G03F1/60 ,  G03F7/427 ,  H01J37/32229 ,  H01J37/32422 ,  H01J37/32486 ,  H01J37/32825 ,  H01L21/68757

摘要： According to one embodiment, in a mounting stage for mounting a target substrate subjected to processing with reducing radicals, the mounting stage includes a mounting surface covered with the target substrate in plan view, a non-mounting surface adjacent to the mounting surface, and a mounting part configured to hold the target substrate. The mounting part is projected from the mounting surface and holds the target substrate so as to form a space between a back surface of the target substrate and the mounting surface during the processing, and surface of the mounting surface and the non-mounting surface are covered with a material suppressing deactivation of reducing radicals.

摘要翻译： 根据一个实施例，在用于安装经过还原自由基处理的目标基板的安装阶段中，安装台包括在平面图中被目标基板覆盖的安装表面，与安装表面相邻的非安装表面，以及 配置成保持目标基板的安装部件。 安装部从安装面突出并保持目标基板，以在加工过程中在目标基板的背面和安装面之间形成空间，并且安装面和非安装面的表面被覆盖 具有抑制还原自由基的失活的材料。

公开(公告)号：US09122167B2

公开(公告)日：2015-09-01

申请号：US14274816

申请日：2014-05-12

申请人： ORTHOGONAL, INC.

发明人： John Andrew Defranco ,  Francis Houlihan ,  Charles Warren Wright ,  Diane Carol Freeman ,  Frank Xavier Byrne ,  Douglas Robert Robello ,  Sandra Rubsam ,  Terrence Robert O'Toole

IPC分类号： G03F7/26 ,  G03F7/42 ,  G03F7/004 ,  G03F7/039 ,  G03F7/32

CPC分类号： G03F7/42 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/0392 ,  G03F7/16 ,  G03F7/20 ,  G03F7/325 ,  G03F7/426 ,  G03F7/427

摘要： A photopolymer layer is formed on an organic device substrate and exposed to patterned radiation. The photopolymer layer includes a photopolymer comprising at least a first repeating unit having an acid-catalyzed, solubility-altering reactive group, wherein the total fluorine content of the photopolymer is less than 30% by weight. The pattern exposed photopolymer is contacted with a developing agent, such as a developing solution, to remove unexposed photopolymer, thereby forming a developed structure having a first pattern of exposed photopolymer covering the substrate and a complementary second pattern of uncovered substrate corresponding to the unexposed photopolymer. The developing agent comprises at least 50% by volume of a hydrofluoroether developing solvent.

摘要翻译： 在有机器件衬底上形成光敏聚合物层并暴露于图案化辐射。 感光聚合物层包括至少包含具有酸催化的溶解性变化反应性基团的第一重复单元的光聚合物，其中光聚合物的总氟含量小于30重量％。 将图案曝光的光聚合物与显影剂如显影液接触以除去未曝光的光聚合物，从而形成显影结构，其具有覆盖基材的曝光的光聚合物的第一图案和对应于未曝光的光聚合物的互补的未覆盖的基材图案 。 显影剂包含至少50体积％的氢氟醚显影溶剂。

公开(公告)号：US20150007856A1

公开(公告)日：2015-01-08

申请号：US14325278

申请日：2014-07-07

申请人： David Jackson

发明人： David Jackson

IPC分类号： B08B7/00 ,  B08B3/08

CPC分类号： B08B7/0057 ,  A61L2/10 ,  A61L2/186 ,  A61L2/22 ,  B08B3/08 ,  C11D3/3734 ,  C11D11/007 ,  G03F7/42 ,  G03F7/422 ,  G03F7/427 ,  G03F7/428 ,  H01L21/67051 ,  H01L21/67057

摘要： A method and an apparatus for removing or modifying a portion of a substrate surface, including contaminants thereon, using volatile methyl siloxanes (VMS) treatment fluid containing a controlled level of dissolved ozone (O3) gas and ultraviolet (UV) light is provided.

摘要翻译： 提供了使用含有受控量的溶解臭氧（O3）气体和紫外线（UV）光的挥发性甲基硅氧烷（VMS）处理流体来除去或改变基板表面的一部分（包括污染物）的方法和装置。

公开(公告)号：US08691701B2

公开(公告)日：2014-04-08

申请号：US12463155

申请日：2009-05-08

申请人： Bing Ji ,  Andrew D. Bailey, III ,  Maryam Moravej ,  Stephen M. Sirard

发明人： Bing Ji ,  Andrew D. Bailey, III ,  Maryam Moravej ,  Stephen M. Sirard

IPC分类号： H01L21/302

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01L21/31116

摘要： A method for forming etched features in a low-k dielectric layer disposed below the photoresist mask in a plasma processing chamber is provided. Features are etched into the low-k dielectric layer through the photoresist mask. The photoresist mask is stripped, wherein the stripping comprising at least one cycle, wherein each cycle comprises a fluorocarbon stripping phase, comprising flowing a fluorocarbon stripping gas into the plasma processing chamber, forming a plasma from the fluorocarbon stripping gas, and stopping the flow of the fluorocarbon stripping gas into the plasma processing chamber and a reduced fluorocarbon stripping phase, comprising flowing a reduced fluorocarbon stripping gas that has a lower fluorocarbon flow rate than the fluorocarbon stripping gas into the plasma processing chamber, forming the plasma from the reduced fluorocarbon stripping gas, and stopping the flow of the reduced fluorocarbon stripping gas.

摘要翻译： 提供了一种用于在等离子体处理室中的光致抗蚀剂掩模下方形成低k电介质层中形成蚀刻特征的方法。 通过光致抗蚀剂掩模将特征蚀刻到低k电介质层中。 剥离光致抗蚀剂掩模，其中剥离包括至少一个循环，其中每个循环包括氟碳汽提相，包括将氟碳汽提气体流入等离子体处理室，从氟碳汽提气体形成等离子体，并停止 进入等离子体处理室中的碳氟化合物汽提气体和减少的氟碳汽提阶段，包括将具有低于碳氟化合物汽提气体的碳氟化合物流速低的氟化碳汽提气体流入等离子体处理室，从还原氟碳汽提气体形成等离子体 ，并停止还原氟烃剥离气体的流动。

公开(公告)号：US20130247824A1

公开(公告)日：2013-09-26

申请号：US13888693

申请日：2013-05-07

申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

发明人： Ludovic Godet ,  Patrick M. Martin

IPC分类号： C23C16/50

CPC分类号： C23C16/50 ,  G03F7/405 ,  G03F7/427 ,  G03F7/7045 ,  G03F7/70875 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/32422 ,  H01L21/0273

摘要： A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.

摘要翻译： 减少设置在基板上的抗蚀剂特征的表面粗糙度的方法包括产生具有等离子体鞘和其中的离子的等离子体。 使用等离子体护套改性剂改变等离子体和等离子体护套之间的边界的形状，使得面对衬底的边界的一部分不平行于由衬底限定的平面。 在第一曝光期间，抗蚀剂特征暴露于具有所需波长的电磁辐射，并且离子在角度范围内被加速跨过具有改变形状的边界朝向抗蚀剂特征。

公开(公告)号：US20130001754A1

公开(公告)日：2013-01-03

申请号：US13607390

申请日：2012-09-07

申请人： Sangjun Cho ,  Tom Choi ,  Taejoon Han ,  Sean Kang ,  Prabhakara Gopaladasu ,  Bi-Ming Yen

发明人： Sangjun Cho ,  Tom Choi ,  Taejoon Han ,  Sean Kang ,  Prabhakara Gopaladasu ,  Bi-Ming Yen

IPC分类号： H01L21/308 ,  H01L21/3065 ,  H01L29/02

CPC分类号： H01L21/3081 ,  G03F7/427 ,  H01L21/31138 ,  H01L21/32139

摘要： A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.

摘要翻译： 提供了一种用于蚀刻硅层中的特征的方法。 在硅层上形成硬掩模层。 在硬掩模层上形成光致抗蚀剂层。 打开硬掩模层。 通过提供剥离气体来剥离光致抗蚀剂层; 通过提供高频RF功率和低频RF功率与剥离气体形成等离子体，其中低频RF功率具有小于50瓦的功率; 并且当剥离光致抗蚀剂层时停止剥离气体。 打开硬掩模层和剥离光致抗蚀剂层在相同的室中进行。