公开(公告)号：US12087555B2

公开(公告)日：2024-09-10

申请号：US18083301

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Shailendra Srivastava ,  Tejas Ulavi ,  Yusheng Zhou ,  Amit Kumar Bansal ,  Sanjeev Baluja

IPC: H01J37/32 ,  B08B7/00 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  G03F7/42

CPC classification number: H01J37/32495 ,  H01J37/32862 ,  H01L21/67017 ,  B08B7/0021 ,  G03F7/427 ,  H01J37/32834 ,  H01L21/67028 ,  H01L21/6831 ,  H01L21/68742

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

公开(公告)号：US12013645B2

公开(公告)日：2024-06-18

申请号：US17715048

申请日：2022-04-07

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Christine Y Ouyang

IPC: G03F7/42 ,  G03F7/00 ,  G03F7/004 ,  G03F7/027 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/528

CPC classification number: G03F7/427 ,  G03F7/0043 ,  G03F7/027 ,  G03F7/70033 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31138 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/5283 ,  H01L24/09 ,  H01L24/17 ,  H01L24/19 ,  H01L2224/023 ,  H01L2224/02373 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/92244

Abstract: A method for removing a resist layer is provided. A resist layer is formed with a material comprising a metal oxide core with organic ligands. A chlorine-containing compound or a methyl group-containing compound is globally applied onto the resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the resist layer so as to remove the resist layer through sublimation.

公开(公告)号：US11977333B2

公开(公告)日：2024-05-07

申请号：US16527525

申请日：2019-07-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hung-Jui Kuo ,  Hsing-Chieh Lee ,  Ming-Tan Lee

IPC: G03F7/09 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/30 ,  G03F7/36 ,  G03F7/42 ,  H01L21/027

CPC classification number: G03F7/36 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0758 ,  G03F7/091 ,  G03F7/30 ,  G03F7/427 ,  H01L21/0276

Abstract: A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.

公开(公告)号：US11829539B1

公开(公告)日：2023-11-28

申请号：US17745233

申请日：2022-05-16

Applicant: TPK Advanced Solutions Inc.

Inventor： Shao Jie Liu ,  Chia Jui Lin ,  Chien Hsien Yu ,  Jian Zhang ,  Si Qiang Xu ,  Jun Hua Huang ,  Mei Fen Bai ,  Song Xin Wang ,  Long Yun Zhan ,  Bo Huang

IPC: G06F3/041 ,  G03F7/16 ,  G03F7/42 ,  G03F7/30

CPC classification number: G06F3/041 ,  G03F7/16 ,  G03F7/30 ,  G03F7/427 ,  G06F2203/04103

Abstract: A touch sensor having a visible area and a peripheral area includes a substrate, a metal nanowire layer, and a silver layer. The metal nanowire layer is disposed on a main surface of the substrate and defines an electrode portion and first and second wirings, in which the first wiring includes a lead-out portion connected to the electrode portion and a lead portion connected to the lead-out portion, and the second wiring is disposed on a side of the first wiring relatively away from the visible area and adjacent to an edge of the main surface. The silver layer is stacked on the first and second wirings and has a first side facing toward the visible area and a second side facing away from the visible area, and an edge roughness on the first side is greater than an edge roughness on the second side.

公开(公告)号：US20230367406A1

公开(公告)日：2023-11-16

申请号：US17745233

申请日：2022-05-16

Applicant: TPK Advanced Solutions Inc.

Inventor： Shao Jie Liu ,  Chia Jui Lin ,  Chien Hsien Yu ,  Jian Zhang ,  Si Qiang Xu ,  Jun Hua Huang ,  Mei Fen Bai ,  Song Xin Wang ,  Long Yun Zhan ,  Bo Huang

IPC: G06F3/041 ,  G03F7/16 ,  G03F7/30 ,  G03F7/42

CPC classification number: G06F3/041 ,  G03F7/16 ,  G03F7/30 ,  G03F7/427 ,  G06F2203/04103

Abstract: A touch sensor having a visible area and a peripheral area includes a substrate, a metal nanowire layer, and a silver layer. The metal nanowire layer is disposed on a main surface of the substrate and defines an electrode portion and first and second wirings, in which the first wiring includes a lead-out portion connected to the electrode portion and a lead portion connected to the lead-out portion, and the second wiring is disposed on a side of the first wiring relatively away from the visible area and adjacent to an edge of the main surface. The silver layer is stacked on the first and second wirings and has a first side facing toward the visible area and a second side facing away from the visible area, and an edge roughness on the first side is greater than an edge roughness on the second side.

公开(公告)号：US11762498B1

公开(公告)日：2023-09-19

申请号：US18094697

申请日：2023-01-09

Applicant: TPK Advanced Solutions Inc.

Inventor： Shao Jie Liu ,  Chia Jui Lin ,  Wei Chuan Chao ,  Jian Zhang ,  Longyun Zhan ,  Jun Hua Huang

IPC: G06F3/041 ,  G03F7/42

CPC classification number: G06F3/04164 ,  G03F7/427 ,  G06F2203/04103

Abstract: A touch sensor having a visible area and a peripheral area includes a substrate, a metal nanowire layer, a transitional insulating portion, and a silver layer. The metal nanowire layer is disposed on the substrate and defines a plurality of electrode portions corresponding to the visible area and a plurality of wiring portions corresponding to the peripheral area, in which the adjacent wiring portions are spaced apart by a spaced region. The transitional insulating portion is disposed in the spaced region and adjacent and connected to a sidewall of each of the wiring portions, and a gap is between two of the transitional insulating portions that are respectively connected to the adjacent wiring portions. The silver layer is disposed on an upper surface of the wiring portions, and the silver layer and the wiring portions together constitute a plurality of peripheral traces of the touch sensor.

公开(公告)号：US20170316935A1

公开(公告)日：2017-11-02

申请号：US15494245

申请日：2017-04-21

Applicant: Lam Research Corporation

Inventor： Samantha Tan ,  Jengyi Yu ,  Richard Wise ,  Nader Shamma ,  Yang Pan

IPC: H01L21/027 ,  H01L21/3105 ,  H01J37/32 ,  G03F7/42 ,  H01L21/311

CPC classification number: H01L21/0273 ,  G03F7/427 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/02115 ,  H01L21/3065 ,  H01L21/31056 ,  H01L21/31058 ,  H01L21/31138

Abstract: Methods of and apparatuses for processing substrates having carbon-containing material using atomic layer deposition and selective deposition are provided. Methods involve exposing a carbon-containing material on a substrate to an oxidant and igniting a first plasma at a first bias power to modify a surface of the substrate and exposing the modified surface to an inert plasma at a second bias power to remove the modified surface. Methods also involve selectively depositing a second carbon-containing material onto the substrate. ALE and selective deposition may be performed without breaking vacuum.

公开(公告)号：US09613825B2

公开(公告)日：2017-04-04

申请号：US13590083

申请日：2012-08-20

Applicant: Roey Shaviv ,  Kirk Ostrowski ,  David Cheung ,  Joon Park ,  Bayu Thedjoisworo ,  Patrick J. Lord

Inventor： Roey Shaviv ,  Kirk Ostrowski ,  David Cheung ,  Joon Park ,  Bayu Thedjoisworo ,  Patrick J. Lord

IPC: H01L21/311 ,  G03F7/42 ,  H01J37/32

CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01J37/32449 ,  H01J37/32724

Abstract: Provided herein are methods and apparatus of hydrogen-based photoresist strip operations that reduce dislocations in a silicon wafer or other substrate. According to various embodiments, the hydrogen-based photoresist strip methods can employ one or more of the following techniques: 1) minimization of hydrogen budget by using short processes with minimal overstrip duration, 2) providing dilute hydrogen, e.g., 2%-16% hydrogen concentration, 3) minimization of material loss by controlling process conditions and chemistry, 4) using a low temperature resist strip, 5) controlling implant conditions and concentrations, and 6) performing one or more post-strip venting processes. Apparatus suitable to perform the photoresist strip methods are also provided.

公开(公告)号：US09469912B2

公开(公告)日：2016-10-18

申请号：US14257744

申请日：2014-04-21

Applicant: Lam Research Corporation

Inventor： Bryan L. Buckalew ,  Mark L. Rea

IPC: H01L21/00 ,  C25D5/48 ,  H01L21/027 ,  C25D7/12 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/02068 ,  C23C18/1605 ,  C23C18/1803 ,  C25D5/022 ,  C25D5/34 ,  C25D5/48 ,  C25D7/123 ,  G03F7/427 ,  H01J37/32357 ,  H01J37/32889 ,  H01J37/32899 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/6723 ,  H01L21/76862 ,  H01L21/76873 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/0381 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05557 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1161 ,  H01L2224/1181 ,  H01L2224/13018 ,  H01L2224/1308 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/014

Abstract: Certain embodiments herein relate to methods and apparatus for processing a partially fabricated semiconductor substrate in a remote plasma environment. The methods may be performed in the context of wafer level packaging (WLP) processes. The methods may include exposing the substrate to a reducing plasma to remove photoresist scum and/or oxidation from an underlying seed layer. In some cases, photoresist scum is removed through a series of plasma treatments involving exposure to an oxygen-containing plasma followed by exposure to a reducing plasma. In some embodiments, an oxygen-containing plasma is further used to strip photoresist from a substrate surface after electroplating. This plasma strip may be followed by a plasma treatment involving exposure to a reducing plasma. The plasma treatments herein may involve exposure to a remote plasma within a plasma treatment module of a multi-tool electroplating apparatus.

Abstract translation: 本文中的某些实施例涉及用于在远程等离子体环境中处理部分制造的半导体衬底的方法和装置。 这些方法可以在晶片级封装（WLP）工艺的上下文中进行。 所述方法可以包括将衬底暴露于还原等离子体以从底层种子层去除光致抗蚀剂浮渣和/或氧化。 在一些情况下，通过一系列等离子体处理除去光致抗蚀剂浮渣，包括暴露于含氧等离子体，然后暴露于还原等离子体。 在一些实施例中，进一步使用含氧等离子体在电镀之后从基板表面剥离光致抗蚀剂。 该等离子体条之后可以进行涉及暴露于还原等离子体的等离子体处理。 这里的等离子体处理可能涉及暴露于多工具电镀设备的等离子体处理模块内的远程等离子体。

公开(公告)号：US20160128200A1

公开(公告)日：2016-05-05

申请号：US14896016

申请日：2014-05-26

Applicant: USHIO DENKI KABUSHIKI KAISHA

Inventor： Kenichi HIROSE

IPC: H05K3/00 ,  H01L21/67

CPC classification number: H05K3/0055 ,  G03F7/427 ,  H01L21/67115 ,  H05K2203/081 ,  H05K2203/087

Abstract: An ashing apparatus includes a treatment chamber having an object to be processed therein, and a lamp chamber having an ultraviolet lamp that radiates the object with an ultraviolet beam. The ashing apparatus is configured to accurately maintain an irradiation distance between a light source and the object. Thus, it is possible to efficiently remove a smear from a wiring board. The treatment chamber and the lamp chamber are moved relative to each other and in parallel to a surface of the object to be processed. The treatment chamber has a stage that supports the object, a gas inlet opening for supplying a treatment gas into the treatment chamber, and a gas outlet opening for discharging the treatment gas. An ultraviolet transmitting window member that partitions the treatment chamber and the lamp chamber from each other is fixed to the treatment chamber.

Abstract translation: 灰化装置包括具有待处理物体的处理室和具有用紫外线照射物体的紫外线灯的灯室。 灰化装置被配置为精确地保持光源和物体之间的照射距离。 因此，可以有效地从布线板去除污迹。 处理室和灯室相对于彼此移动并且平行于被处理物体的表面移动。 处理室具有支撑物体的台，用于将处理气体供给到处理室的气体入口，以及用于排出处理气体的气体出口。 将处理室和灯室分隔开的紫外线透射窗构件被固定到处理室。