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公开(公告)号:US20080079116A1
公开(公告)日:2008-04-03
申请号:US11542540
申请日:2006-10-03
申请人: Luo Yuan , Derchang Kau , Wei-Kai Shih , Shafqat Ahmed , Brian K. Armstrong
发明人: Luo Yuan , Derchang Kau , Wei-Kai Shih , Shafqat Ahmed , Brian K. Armstrong
IPC分类号: H01L29/00
CPC分类号: H01L29/93 , H01L29/94 , H03B5/1215 , H03B5/1228 , H03B5/1253 , H03L7/093 , H03L7/099
摘要: An MOS varactor may be formed without tip implants or HALO implants. As a result, parasitic resistance may be reduced, jitter may be improved, and the quality factor may be increased, as well as the tunable range of the varactor.
摘要翻译: 可以形成MOS变容管体,无尖端植入物或HALO植入物。 结果,可以减小寄生电阻,可以提高抖动,并且可以提高品质因数以及变容二极管的可调范围。
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公开(公告)号:US20080079051A1
公开(公告)日:2008-04-03
申请号:US11529943
申请日:2006-09-29
申请人: Luo Yuan , Derchang Kau , Wei-Kai Shih , Shafqat Ahmed , Brian K. Armstrong
发明人: Luo Yuan , Derchang Kau , Wei-Kai Shih , Shafqat Ahmed , Brian K. Armstrong
CPC分类号: H01L29/7833 , H01L29/1083 , H01L29/66492 , H01L29/6659
摘要: A metal oxide semiconductor varactor may be formed with HALO implants regions having an opposite polarity from the polarity of the well of the varactor. The HALO implant regions can be angled away from the source and drain. The HALO implant regions can stop the depletion from continuing as the bias voltage applied to the gate continues to increase. Stopping that depletion can create a constant capacitance when the varactor is in a depletion bias.
摘要翻译: 金属氧化物半导体变容二极管可以形成为具有与变容二极管的极性相反极性的HALO注入区域。 HALO植入区域可以远离源极和漏极成角度。 随着施加到栅极的偏置电压继续增加,HALO注入区域可以阻止耗尽继续。 当变容二极管处于耗尽偏压时,停止耗尽可产生恒定电容。
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