公开(公告)号：US07202136B2

公开(公告)日：2007-04-10

申请号：US11121454

申请日：2005-05-04

申请人： Louis D. Lanzerotti ,  Brian P. Ronan ,  Steven H. Voldman

发明人： Louis D. Lanzerotti ,  Brian P. Ronan ,  Steven H. Voldman

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L29/66242 ,  H01H85/47 ,  H01L29/7378

摘要： A silicon germanium heterojunction bipolar transistor device and method comprises a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant therein to minimize boron diffusion, and wherein a combination of an amount of the dopant, an amount of the boron, and a size of the semiconductor region are such that the diffusion region has a sheet resistance of less than approximately 4 Kohms/cm2. Also, the diffusion region is boron-doped at a concentration of 1×1020/cm3 to 1×1021/cm3. Additionally, the semiconductor region comprises 5–25% germanium and 0–3% carbon. By adding carbon to the semiconductor region, the device achieves an electrostatic discharge robustness, which further causes a tighter distribution of a power-to-failure of the device, and increases a critical thickness and reduces the thermal strain of the semiconductor region.

摘要翻译： 硅锗异质结双极晶体管器件和方法包括半导体区域和半导体区域中的扩散区域，其中扩散区域是硼掺杂的，其中半导体区域包括其中的碳掺杂剂以最小化硼扩散，并且其中组合 的掺杂剂的量，硼的量和半导体区域的尺寸使得扩散区域具有小于约4Kohms / cm 2的薄层电阻。 此外，扩散区域以1×10 20 / cm 3至1×10 21 / cm 3的浓度硼掺杂， SUP>。 另外，半导体区域包括5-25％的锗和0-3％的碳。 通过向半导体区域添加碳，该器件实现了静电放电鲁棒性，这进一步导致器件的功率故障分布更严格，并且增加了临界厚度并降低了半导体区域的热应变。

公开(公告)号：US07138669B2

公开(公告)日：2006-11-21

申请号：US10660048

申请日：2003-09-11

申请人： Louis D. Lanzerotti ,  Brian P. Ronan ,  Steven H. Voldman

发明人： Louis D. Lanzerotti ,  Brian P. Ronan ,  Steven H. Voldman

IPC分类号： H01L29/739 ,  H01L27/02

CPC分类号： H01L29/66242 ,  H01H85/47 ,  H01L29/7378

摘要： A silicon germanium heterojunction bipolar transistor device and method comprises a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant therein to minimize boron diffusion, and wherein a combination of an amount of the dopant, an amount of the boron, and a size of the semiconductor region are such that the diffusion region has a sheet resistance of less than approximately 4 Kohms/cm2. Also, the diffusion region is boron-doped at a concentration of 1×1020/cm3 to 1×1021/cm3. Additionally, the semiconductor region comprises 5–25% germanium and 0–3% carbon. By adding carbon to the semiconductor region, the device achieves an electrostatic discharge robustness, which further causes a tighter distribution of a power-to-failure of the device, and increases a critical thickness and reduces the thermal strain of the semiconductor region.

摘要翻译： 硅锗异质结双极晶体管器件和方法包括半导体区域和半导体区域中的扩散区域，其中扩散区域是硼掺杂的，其中半导体区域包括其中的碳掺杂剂以最小化硼扩散，并且其中组合 的掺杂剂的量，硼的量和半导体区域的尺寸使得扩散区域具有小于约4Kohms / cm 2的薄层电阻。 此外，扩散区域以1×10 20 / cm 3至1×10 21 / cm 3的浓度硼掺杂， SUP>。 另外，半导体区域包括5-25％的锗和0-3％的碳。 通过向半导体区域添加碳，该器件实现了静电放电鲁棒性，这进一步导致器件的功率故障分布更严格，并且增加了临界厚度并降低了半导体区域的热应变。

公开(公告)号：US06670654B2

公开(公告)日：2003-12-30

申请号：US09683498

申请日：2002-01-09

申请人： Louis D. Lanzerotti ,  Brian P. Ronan ,  Steven H. Voldman

发明人： Louis D. Lanzerotti ,  Brian P. Ronan ,  Steven H. Voldman

IPC分类号： H01L31072

CPC分类号： H01L29/66242 ,  H01H85/47 ,  H01L29/7378

摘要： A silicon germanium heterojunction bipolar transistor device having a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant therein to minimize boron diffusion, and wherein a combination of an amount of the dopant, an amount of the boron, and a size of the semiconductor region are such that the diffusion region has a sheet resistance of less than approximately 4 Kohms/cm2. Also, the diffusion region is boron-doped at a concentration of 1×1020/cm3 to 1×1021/cm3. Additionally, the semiconductor region comprises 5-25% germanium and 0-3% carbon. By adding carbon to the semiconductor region, the device achieves an electrostatic discharge robustness, which further causes a tighter distribution of a power-to-failure of the device, and increases a critical thickness and reduces the thermal strain of the semiconductor region.

摘要翻译： 具有半导体区域的硅锗异质结双极晶体管器件和半导体区域中的扩散区域，其中所述扩散区域是硼掺杂的，其中所述半导体区域包括其中的碳掺杂剂以使硼扩散最小化，并且其中， 掺杂剂的量，硼的量和半导体区域的尺寸使得扩散区域的薄层电阻小于约4Kohms / cm 2。 此外，扩散区域以1×10 20 / cm 3至1×10 21 / cm 3的浓度进行硼掺杂。 另外，半导体区域包括5-25％的锗和0-3％的碳。 通过向半导体区域添加碳，该器件实现了静电放电鲁棒性，这进一步导致器件的功率故障分布更严格，并且增加了临界厚度并降低了半导体区域的热应变。