公开(公告)号：US4859629A

公开(公告)日：1989-08-22

申请号：US132811

申请日：1987-12-14

申请人： Bruce A. Reardon ,  Joel L. Goodrich

发明人： Bruce A. Reardon ,  Joel L. Goodrich

IPC分类号： H01L21/60 ,  H01L23/482

CPC分类号： H01L21/76897 ,  H01L23/4822 ,  H01L24/01 ,  H01L2924/12032 ,  Y10S438/977

摘要： A semiconductor device and associated method of fabrication in which the device includes a semiconductor substrate having a cavity therein extending in a frame pattern. An insulating layer such as one of silicon nitride is deposited in the cavity followed by the deposition of polysilicon to substantially fill the cavity and provide structural support. An epitaxy layer is formed over the surface of the substrate along with a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, resectively. Metallization is deposited to form separate beam leads to provide ohmic contact at the epitaxy layer and substrate.

摘要翻译： 一种半导体器件及其相关制造方法，其中该器件包括其中具有以框架图案延伸的空腔的半导体衬底。 将诸如氮化硅之一的绝缘层沉积在空腔中，随后沉积多晶硅以基本上填充空腔并提供结构支撑。 在衬底的表面上形成外延层以及具有限定在其中的窗口的第二绝缘层，以便能够与外延层和衬底电连接地进行欧姆接触。 金属化被沉积以形成单独的光束引线以在外延层和衬底处提供欧姆接触。

公开(公告)号：US4733290A

公开(公告)日：1988-03-22

申请号：US853706

申请日：1986-04-18

申请人： Bruce A. Reardon ,  Joel L. Goodrich

发明人： Bruce A. Reardon ,  Joel L. Goodrich

IPC分类号： H01L23/482 ,  H01L23/48 ,  H01L29/44 ,  H01L29/52 ,  H01L29/60

CPC分类号： H01L23/4822 ,  H01L24/01 ,  H01L2924/12032

摘要： A semiconductor device and associated method of fabrication in which the device includes a semiconductor substrate having a cavity therein extending in a frame pattern. An insulating layer such as one of silicon nitride is deposited in the cavity followed by the deposition of polysilicon to substantially fill the cavity and provide structural support. An epitaxy layer is formed over the surface of the substrate along with a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, respectively. Metallization is deposited to form separate beam leads to provide ohmic contact at the epitaxy layer and substrate.

摘要翻译： 一种半导体器件及其相关制造方法，其中该器件包括其中具有以框架图案延伸的空腔的半导体衬底。 将诸如氮化硅之一的绝缘层沉积在空腔中，随后沉积多晶硅以基本上填充空腔并提供结构支撑。 在衬底的表面上形成外延层以及其中限定有窗口的第二绝缘层，以分别与外延层和衬底欧姆接触。 金属化被沉积以形成单独的光束引线以在外延层和衬底处提供欧姆接触。