公开(公告)号：US4374915A

公开(公告)日：1983-02-22

申请号：US288519

申请日：1981-07-30

申请人： C. Norman Ahlquist ,  Yaw Wen Hu ,  Peter F. Schoen ,  Paul A. Poenisch

发明人： C. Norman Ahlquist ,  Yaw Wen Hu ,  Peter F. Schoen ,  Paul A. Poenisch

IPC分类号： G03F9/00 ,  G03C11/00

CPC分类号： G03F9/7076 ,  G03F9/00

摘要： A wafer marker is described for aligning masks with the wafer. The marker comprises a depression in the wafer which is defined by sloped sides and a pitted bottom. The sloped sides and pitted bottom do not directly reflect light as does the surface of the surrounding silicon and thus the marker appears as a darker region. The bottom of the depression is pitted by exposing the anode during a silicon plasma etching step.

摘要翻译： 描述了用于将掩模与晶片对准的晶片标记。 标记包括由倾斜侧面和凹陷底部限定的晶片中的凹陷。 倾斜的侧面和凹陷的底部不像周围的硅的表面那样直接反射光，因此标记显示为较暗的区域。 通过在硅等离子体蚀刻步骤期间暴露阳极来凹陷凹陷的底部。

公开(公告)号：US4231811A

公开(公告)日：1980-11-04

申请号：US75095

申请日：1979-09-13

申请人： Sasson Somekh ,  C. Norman Ahlquist

发明人： Sasson Somekh ,  C. Norman Ahlquist

IPC分类号： H01L21/027 ,  H01L21/266 ,  H01L21/336 ,  H01L21/26

CPC分类号： H01L29/66575 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/266 ,  Y10S148/10 ,  Y10S148/137 ,  Y10S148/141 ,  Y10S438/948

摘要： A process for forming with a single masking step regions of different thicknesses in a photo-sensitive layer is disclosed. A masking member or reticle includes opaque and transparent areas and areas with a grating. The pitch of the periodic grating is of a lesser dimension than can be resolved by the masking projection apparatus. The photo-sensitive region illuminated by the grating receives uniform illumination at an intermediate intensity, thereby providing, after developing, a layer with regions of intermediate thickness.

摘要翻译： 公开了一种在光敏层中用不同厚度的单个掩模步骤形成区域的方法。 掩模构件或掩模版包括不透明区域和具有光栅的区域。 周期光栅的间距比由掩模投影装置可以解析的尺寸小。 由光栅照射的光敏区域以中等强度接收均匀的照明，从而在显影之后提供具有中等厚度的区域的层。