公开(公告)号：US20070039817A1

公开(公告)日：2007-02-22

申请号：US10549401

申请日：2004-08-20

申请人： Brian Daniels ,  Michael Thomas ,  Susand Strothers ,  Wuwen Yi ,  Anil Bhanap ,  Eal Lee ,  Cara Hutchinson ,  Christie Hausman

发明人： Brian Daniels ,  Michael Thomas ,  Susand Strothers ,  Wuwen Yi ,  Anil Bhanap ,  Eal Lee ,  Cara Hutchinson ,  Christie Hausman

IPC分类号： C23C14/00 ,  C23C14/32

CPC分类号： C23C14/3414 ,  B32B15/012 ,  C23C14/16 ,  C23C14/185 ,  C23C14/3407 ,  H01L21/2855 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76877 ,  H01L23/53233 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention includes a physical vapor deposition target containing copper and at least two additional elements selected from Ag, Al, As, Au, B, Be, Ca, Cd, Co, Cr, Fe, Ga, Ge, Hf, Hg, In, Ir, Li, Mg, Mn, Nb, Ni, Pb, Pd, Pt, Sb, Sc, Si, Sn, Ta, Te, Ti, V, W, Zn and Zr, a total amount of the at least two additional elements being from 100 ppm to 10 atomic %. The invention additionally includes thin films and interconnects which contain the mixture of copper and at least two added elements. The invention also includes forming a copper-containing target. A mixture of copper and two or more elements is formed. The mixture is cast by melting and is subsequently cooled to form a billet which is worked utilizing one or both of equal channel angular extrusion and thermomechanical processing to form a target.

摘要翻译： 本发明包括含有铜和至少两种选自Ag，Al，As，Au，B，Be，Ca，Cd，Co，Cr，Fe，Ga，Ge，Hf，Hg，In， Ir，Li，Mg，Mn，Nb，Ni，Pb，Pd，Pt，Sb，Sc，Si，Sn，Ta，Te，Ti，V，W，Zn和Zr中的至少两种添加元素 为100〜10原子％。 本发明还包括含有铜和至少两种添加元素的混合物的薄膜和互连。 本发明还包括形成含铜靶。 形成铜和两种或更多种元素的混合物。 混合物通过熔融铸造并随后冷却以形成坯料，其利用等通道角挤压和热机械加工中的一种或两种来形成靶。