Grid formed with silicon substrate
    1.
    发明授权
    Grid formed with silicon substrate 失效
    栅格形成硅衬底

    公开(公告)号:US06018566A

    公开(公告)日:2000-01-25

    申请号:US957541

    申请日:1997-10-24

    IPC分类号: G21K1/02 G21K1/00

    CPC分类号: G21K1/025

    摘要: An X-ray collimator grid is formed within a wafer of monocrystalline silicon material by forming a plurality of spaced parallel elongate slots within a planar surface of a silicon crystal wafer, and forming slats of heavy metal in situs within each of said slots, including squeegeeing the heavy metal into the slots, from particles of heavy metal, each said slat gripping the walls of an associated slot.

    摘要翻译: 通过在硅晶片的平坦表面内形成多个间隔开的平行细长槽,并在每个所述槽内形成位于所述槽内的重金属板条,形成在单晶硅材料晶片内的X射线准直器栅格,包括刮板 重金属进入槽,从重金属的颗粒,每个所述的板条抓住相关槽的壁。