公开(公告)号：US20130256666A1

公开(公告)日：2013-10-03

申请号：US13846896

申请日：2013-03-18

申请人： Hui-Yu Chang ,  Ming-Chang Yu ,  Chang-Ching Chiou ,  Hsi-Rong Han

发明人： Hui-Yu Chang ,  Ming-Chang Yu ,  Chang-Ching Chiou ,  Hsi-Rong Han

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/78693 ,  H01L29/66765 ,  H01L29/7869 ,  H01L29/78696

摘要： A thin film transistor and a manufacturing method thereof are provided. The thin film transistor includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric layer. The gate is disposed on a substrate. The oxide channel layer, disposed on the substrate, is stacked with the gate. A material of the oxide channel layer includes a metal element. The metal element content shows a gradient distribution along a thickness direction of the oxide channel layer. The gate insulation layer is disposed between the gate and the oxide channel layer. The source and the drain are disposed in parallel to each other, and connected to the oxide channel layer. Sides of the source and the drain, facing away from the substrate, are covered by the dielectric layer.

摘要翻译： 提供薄膜晶体管及其制造方法。 薄膜晶体管包括栅极，氧化物沟道层，栅极绝缘层，源极，漏极和介电层。 栅极设置在基板上。 设置在基板上的氧化物沟道层与栅极堆叠。 氧化物沟道层的材料包括金属元素。 金属元素含量表示沿着氧化物沟道层的厚度方向的梯度分布。 栅极绝缘层设置在栅极和氧化物沟道层之间。 源极和漏极彼此平行地设置并连接到氧化物沟道层。 源极和漏极的背离衬底的侧面被电介质层覆盖。