公开(公告)号：US06806144B2

公开(公告)日：2004-10-19

申请号：US10217860

申请日：2002-08-13

Applicant: Pu-Fan Chen ,  Chao-Po Lu ,  Hsi-Shen Chuang ,  Yi-Jen Chen ,  Chin-Tsai Chen ,  Tsukada Kazunori

Inventor： Pu-Fan Chen ,  Chao-Po Lu ,  Hsi-Shen Chuang ,  Yi-Jen Chen ,  Chin-Tsai Chen ,  Tsukada Kazunori

IPC: H01L21336

CPC classification number: H01L21/28185 ,  C23C8/10 ,  C30B33/005 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/67017

Abstract: A method and apparatus for improving a uniformity of a thermally grown silicon dioxide layer including thermally growing a layer over the exposed silicon portions including silicon dioxide according to a thermal oxide growing process; exposing the gas reactant feed lines to reactant gases during at least one of the step of thermally growing a layer and a cleaning process following the step of thermally growing a layer; and, purging the gas flow pathways to bypass the reactor chamber with at least one purge gas source including an inert gas to remove residual reactant gas contaminants to improve a subsequently thermally grown silicon dioxide layer.