公开(公告)号：US4968638A

公开(公告)日：1990-11-06

申请号：US239646

申请日：1988-09-02

申请人： Stephen W. Wright ,  Charles P. Judge ,  Michael J. Lee

发明人： Stephen W. Wright ,  Charles P. Judge ,  Michael J. Lee

IPC分类号： H01L27/12 ,  H01L21/34 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66969 ,  H01L29/78648 ,  H01L29/78681 ,  Y10S148/106

摘要： A method of manufacture of thin film, field-effect transistors formed on a transparent substrate and with transparent, conductive source and drain electrodes, uses initially deposited gate electrodes as a mask in association with photolithographic processing using radiation transmitted through the substrate and electrodes to minimize parasitic capacitance between the gate and source and drain electrodes.