公开(公告)号：US20090047870A1

公开(公告)日：2009-02-19

申请号：US12179643

申请日：2008-07-25

申请人： Junaid Ahmed Siddiqui ,  Quamrul Arefeen ,  Chelsea L. Beck

发明人： Junaid Ahmed Siddiqui ,  Quamrul Arefeen ,  Chelsea L. Beck

IPC分类号： B24B1/00 ,  B24B29/00

CPC分类号： C09G1/02 ,  B24B37/044

摘要： A method of polishing a substrate surface containing silicon nitride and silicon oxide or silicon dioxide, comprising movably contacting the surface with a polishing pad and having a polishing composition disposed between the polishing pad and the surface, said polishing composition comprising 1) hydrous ceria abrasive; 2) polyvinylpyridine, vinyl pyridine copolymers, or both, and 3) water, wherein at 2 psi downpressure the silicon nitride removal rate is at least 500 angstroms per minute and the selectivity of silicon nitride to silicon oxide is at least 30.

摘要翻译： 一种抛光含有氮化硅和氧化硅或二氧化硅的衬底表面的方法，包括使表面与抛光垫可移动地接触并且具有设置在抛光垫和表面之间的抛光组合物，所述抛光组合物包含1）含水二氧化铈磨料; 2）聚乙烯基吡啶，乙烯基吡啶共聚物或两者，以及3）水，其中在2psi的压力下，氮化硅去除速率为至少500埃/分钟，并且氮化硅与氧化硅的选择性为至少30。