公开(公告)号：US06271086B1

公开(公告)日：2001-08-07

申请号：US09343846

申请日：1999-06-30

Applicant: Kuo-Chi Lin ,  Da-Wen Hsia ,  Cheng-Chiech Huang

Inventor： Kuo-Chi Lin ,  Da-Wen Hsia ,  Cheng-Chiech Huang

IPC: H01L218242

CPC classification number: H01L28/84 ,  H01L27/10852 ,  Y10S438/964

Abstract: A method for preventing the cluster defect of HSG is disclosed. Where the cluster defect means that when wafer with HSGs are cleaned just when HSGs are formed, there are a plurality of clusters appear on HSGs. In comparison with conventional fabrication that wafer and HSGs are directly cleaned just when these HSGs are formed. The idea behind the invention is that when HSGs are formed, a heat treatment is applied to change surface states of HSGs before wafer and HSGs are cleaned. Owing to the fact that these surface states of HSGs are improved by the heat treatment, no cluster will be formed during following clean process. Thus, the formation of cluster is obviously protected and then quality of any application of HSGs is improved by the invention.

Abstract translation: 公开了一种防止HSG的簇缺陷的方法。 当集群缺陷意味着当形成HSG时清洗具有HSG的晶片时，HSG上出现多个簇。 与传统的制造相比，只有在形成这些HSG时，直接清洗晶片和HSG。 本发明的想法是，当形成HSG时，在清洗晶片和HSG之前，应用热处理来改变HSG的表面状态。 由于通过热处理改善了HSG的这些表面状态，因此在后续清洁过程中不会形成簇。 因此，簇的形成受到明显的保护，本发明提高了HSG的应用质量。