公开(公告)号：US6084240A

公开(公告)日：2000-07-04

申请号：US136580

申请日：1998-08-19

Applicant: Chien-Hsing Lin ,  Cheng-Tai Peng

Inventor： Chien-Hsing Lin ,  Cheng-Tai Peng

IPC: H01J37/304 ,  H01J37/317 ,  H01J37/20

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/2001

Abstract: A temperature monitor is included inside an ion implanting chamber to constantly monitor the wafer temperature during ion implantation. The measured temperature signal is sent to a central control system through an interface circuit. When an abnormal temperature is detected, the central control system automatically ceases the ion implantation operation and triggers an alarm for operators.

Abstract translation: 离子注入室内装有一个温度监测器，以在离子注入期间不断地监测晶片温度。 测量的温度信号通过接口电路发送到中央控制系统。 当检测到异常温度时，中央控制系统自动停止离子注入操作，并为操作员触发报警。