公开(公告)号：US07378071B2

公开(公告)日：2008-05-27

申请号：US11178096

申请日：2005-07-07

Applicant: Hyon-Jong Cho ,  Cheol-Woo Lee ,  Hong-Woo Lee ,  Cheong Jin Soo ,  Kim Sunmi

Inventor： Hyon-Jong Cho ,  Cheol-Woo Lee ,  Hong-Woo Lee ,  Cheong Jin Soo ,  Kim Sunmi

IPC: C01B33/26 ,  C30B15/20

CPC classification number: C30B29/06 ,  C30B15/305

Abstract: A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.

Abstract translation: 一种通过切克劳斯基法生长硅单晶锭的方法，其能够提供具有非常均匀的面内质量的硅晶片，并且导致半导体器件产率的提高。 提供了一种通过切克劳斯基法（Czochralski method）制造硅单晶锭的方法，其中当将硅熔体的对流分为芯电池和外电池时，硅单晶锭在最大水平方向宽度 的核心单元是硅熔体表面半径的30-60％。 在一个实施例中，在单芯晶圆的最大垂直方向深度等于或大于硅熔体的最大深度的50％的条件下，生长硅单晶锭。