公开(公告)号：US20050142839A1

公开(公告)日：2005-06-30

申请号：US11002509

申请日：2004-12-02

Applicant: Ying-Chang Houng ,  Hong-Ching Lin ,  Chi-Jen Shih ,  Shao-Ju Shih

Inventor： Ying-Chang Houng ,  Hong-Ching Lin ,  Chi-Jen Shih ,  Shao-Ju Shih

IPC: C23C18/06 ,  C23C18/08 ,  H01B1/22 ,  H01L21/4763 ,  H05K1/09 ,  H05K3/10

CPC classification number: C23C18/06 ,  C23C18/08 ,  H05K1/097 ,  H05K3/105 ,  Y10T428/256

Abstract: Methods for forming conductive layers. A layer of metal composite is applied on a substrate, comprising a plurality of metal flakes, a plurality of nanometer metal spheres, and a plurality of mixed metal precursors. The plurality of mixed metal precursors comprises a mixture of inorganic salts and organic acidic salts. The layer of metal composite is cured to induce an exothermic reaction, thereby forming a conductive layer on the substrate at a relatively low temperature (

Abstract translation: 形成导电层的方法。 将金属复合材料层施加在基板上，包括多个金属薄片，多个纳米金属球体和多个混合金属前体。 多种混合金属前体包括无机盐和有机酸性盐的混合物。 金属复合材料层被固化以引起放热反应，从而在相对低的温度（<200℃）下在基板上形成导电层，

公开(公告)号：US07135394B2

公开(公告)日：2006-11-14

申请号：US11002509

申请日：2004-12-02

Applicant: Ying-Chang Houng ,  Hong-Ching Lin ,  Chi-Jen Shih ,  Shao-Ju Shih

Inventor： Ying-Chang Houng ,  Hong-Ching Lin ,  Chi-Jen Shih ,  Shao-Ju Shih

IPC: H01L21/44

CPC classification number: C23C18/06 ,  C23C18/08 ,  H05K1/097 ,  H05K3/105 ,  Y10T428/256

Abstract: Methods for forming conductive layers. A layer of metal composite is applied on a substrate, comprising a plurality of metal flakes, a plurality of nanometer metal spheres, and a plurality of mixed metal precursors. The plurality of mixed metal precursors comprises a mixture of inorganic salts and organic acidic salts. The layer of metal composite is cured to induce an exothermic reaction, thereby forming a conductive layer on the substrate at a relatively low temperature (

Abstract translation: 形成导电层的方法。 将金属复合材料层施加在基板上，包括多个金属薄片，多个纳米金属球体和多个混合金属前体。 多种混合金属前体包括无机盐和有机酸性盐的混合物。 金属复合材料层被固化以引起放热反应，从而在相对低的温度（<200℃）下在基板上形成导电层，

公开(公告)号：US07821136B2

公开(公告)日：2010-10-26

申请号：US11552534

申请日：2006-10-25

Applicant: Ying-Chang Houng ,  Hong-Ching Lin ,  Chi-Jen Shih ,  Shao-Ju Shih

Inventor： Ying-Chang Houng ,  Hong-Ching Lin ,  Chi-Jen Shih ,  Shao-Ju Shih

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: C23C18/06 ,  C23C18/08 ,  H05K1/097 ,  H05K3/105 ,  Y10T428/256

Abstract: Methods for forming conductive layers. A layer of metal composite is applied on a substrate, comprising a plurality of metal flakes, a plurality of nanometer metal spheres, and a plurality of mixed metal precursors. The plurality of mixed metal precursors comprises a mixture of inorganic salts and organic acidic salts. The layer of metal composite is cured to induce an exothermic reaction, thereby forming a conductive layer on the substrate at a relatively low temperature (

Abstract translation: 形成导电层的方法。 将金属复合材料层施加在基板上，包括多个金属薄片，多个纳米金属球体和多个混合金属前体。 多种混合金属前体包括无机盐和有机酸性盐的混合物。 固化该金属复合层以引起放热反应，从而在较低温度（<200℃）下在基板上形成导电层。

公开(公告)号：US20070054112A1

公开(公告)日：2007-03-08

申请号：US11552534

申请日：2006-10-25

Applicant: Ying-Chang Houng ,  Hong-Ching Lin ,  Chi-Jen Shih ,  Shao-Ju Shih

Inventor： Ying-Chang Houng ,  Hong-Ching Lin ,  Chi-Jen Shih ,  Shao-Ju Shih

IPC: B32B15/02 ,  B32B9/00

CPC classification number: C23C18/06 ,  C23C18/08 ,  H05K1/097 ,  H05K3/105 ,  Y10T428/256

Abstract: Methods for forming conductive layers. A layer of metal composite is applied on a substrate, comprising a plurality of metal flakes, a plurality of nanometer metal spheres, and a plurality of mixed metal precursors. The plurality of mixed metal precursors comprises a mixture of inorganic salts and organic acidic salts. The layer of metal composite is cured to induce an exothermic reaction, thereby forming a conductive layer on the substrate at a relatively low temperature (

Abstract translation: 形成导电层的方法。 将金属复合材料层施加在基板上，包括多个金属薄片，多个纳米金属球体和多个混合金属前体。 多种混合金属前体包括无机盐和有机酸性盐的混合物。 固化该金属复合层以引起放热反应，从而在较低温度（<200℃）下在基板上形成导电层。

公开(公告)号：US06194300B1

公开(公告)日：2001-02-27

申请号：US09609212

申请日：2000-07-05

Applicant: Chih-Wei Hung ,  Chi-Jen Shih

Inventor： Chih-Wei Hung ,  Chi-Jen Shih

IPC: H01L218247

CPC classification number: H01L21/28273

Abstract: A method for fabricating the floating gate of a split-gate flash memory. A patterned sacrificial layer is formed over a substrate. A doped polysilicon layer and an insulation layer are formed in sequence over the sacrificial layer. The doped polysilicon layer and the insulation layer above the sacrificial layer are removed by chemical-mechanical polishing. The exposed doped polysilicon layer is removed. Finally, the sacrificial layer is removed to complete the fabrication of the floating gate.

Abstract translation: 一种用于制造分闸式闪存的浮栅的方法。 在衬底上形成图案化的牺牲层。 在牺牲层上依次形成掺杂多晶硅层和绝缘层。 通过化学机械抛光去除牺牲层上方的掺杂多晶硅层和绝缘层。 去除暴露的掺杂多晶硅层。 最后，去除牺牲层以完成浮栅的制造。