公开(公告)号：US20090289325A1

公开(公告)日：2009-11-26

申请号：US12511720

申请日：2009-07-29

申请人： Ping-Wei Wang ,  Chii-Ming Morris Wu

发明人： Ping-Wei Wang ,  Chii-Ming Morris Wu

IPC分类号： H01L29/06 ,  H01L23/00

CPC分类号： H01L23/562 ,  H01L23/585 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A crack prevention ring at the exterior edge of an integrated circuit prevents delamination and cracking during the separation of the integrated circuits into individual die. The crack prevention ring extends vertically into a semiconductor workpiece to at least a metallization layer of the integrated circuit. The crack prevention ring may be formed simultaneously with the formation of test pads of the integrated circuits. The crack prevention ring may be partially or completely filled with conductive material. An air pocket may be formed within the crack prevention ring beneath a passivation layer of the integrated circuit. The crack prevention ring may be removed during the singulation process.

摘要翻译： 在集成电路的外部边缘处的防裂环防止在将集成电路分离成单个管芯期间的分层和破裂。 防裂环垂直延伸到半导体工件中至少到集成电路的金属化层。 防裂环可以与集成电路的测试焊盘的形成同时形成。 防裂环可以部分或完全填充导电材料。 可以在集成电路的钝化层下方的防裂环内形成气穴。 在切割过程中可以除去防裂环。

公开(公告)号：US08354734B2

公开(公告)日：2013-01-15

申请号：US12511720

申请日：2009-07-29

申请人： Ping-Wei Wang ,  Chii-Ming Morris Wu

发明人： Ping-Wei Wang ,  Chii-Ming Morris Wu

IPC分类号： H01L23/544

CPC分类号： H01L23/562 ,  H01L23/585 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A crack prevention ring at the exterior edge of an integrated circuit prevents delamination and cracking during the separation of the integrated circuits into individual die. The crack prevention ring extends vertically into a semiconductor workpiece to at least a metallization layer of the integrated circuit. The crack prevention ring may be formed simultaneously with the formation of test pads of the integrated circuits. The crack prevention ring may be partially or completely filled with conductive material. An air pocket may be formed within the crack prevention ring beneath a passivation layer of the integrated circuit. The crack prevention ring may be removed during the singulation process.

公开(公告)号：US07586176B2

公开(公告)日：2009-09-08

申请号：US11788208

申请日：2007-04-19

申请人： Ping-Wei Wang ,  Chii-Ming Morris Wu

发明人： Ping-Wei Wang ,  Chii-Ming Morris Wu

IPC分类号： H01L23/544

CPC分类号： H01L23/562 ,  H01L23/585 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A crack prevention ring at the exterior edge of an integrated circuit prevents delamination and cracking during the separation of the integrated circuits into individual die. The crack prevention ring extends vertically into a semiconductor workpiece to at least a metallization layer of the integrated circuit. The crack prevention ring may be formed simultaneously with the formation of test pads of the integrated circuits. The crack prevention ring may be partially or completely filled with conductive material. An air pocket may be formed within the crack prevention ring beneath a passivation layer of the integrated circuit. The crack prevention ring may be removed during the singulation process.

摘要翻译： 在集成电路的外部边缘处的防裂环防止在将集成电路分离成单个管芯期间的分层和破裂。 防裂环垂直延伸到半导体工件中至少到集成电路的金属化层。 防裂环可以与集成电路的测试焊盘的形成同时形成。 防裂环可以部分或完全填充导电材料。 可以在集成电路的钝化层下方的防裂环内形成气穴。 在切割过程中可以除去防裂环。

公开(公告)号：US07223673B2

公开(公告)日：2007-05-29

申请号：US10891955

申请日：2004-07-15

申请人： Ping-Wei Wang ,  Chii-Ming Morris Wu

发明人： Ping-Wei Wang ,  Chii-Ming Morris Wu

IPC分类号： H01L21/301 ,  H01L21/46 ,  H01L21/78

CPC分类号： H01L23/562 ,  H01L23/585 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a crack prevention ring at the exterior edge of an integrated circuit to prevent delamination and cracking during the separation of the integrated circuits into individual die. The crack prevention ring extends vertically into a semiconductor workpiece to at least a metallization layer of the integrated circuit. The crack prevention ring may be formed simultaneously with the formation of test pads of the integrated circuits. The crack prevention ring may be partially or completely filled with conductive material. An air pocket may be formed within the crack prevention ring beneath a passivation layer of the integrated circuit. The crack prevention ring may be removed during the singulation process. An optional seal ring may be formed between the crack prevention ring and the integrated circuit.

摘要翻译： 在集成电路的外部边缘处形成防裂环的方法，以防止在将集成电路分离成单个管芯期间的分层和破裂。 防裂环垂直延伸到半导体工件中至少到集成电路的金属化层。 防裂环可以与集成电路的测试焊盘的形成同时形成。 防裂环可以部分或完全填充导电材料。 可以在集成电路的钝化层下方的防裂环内形成气穴。 在切割过程中可以除去防裂环。 可以在防裂环和集成电路之间形成可选的密封环。

公开(公告)号：US5920081A

公开(公告)日：1999-07-06

申请号：US842946

申请日：1997-04-25

申请人： Shyn-Ren Chen ,  Chii-Ming Morris Wu

发明人： Shyn-Ren Chen ,  Chii-Ming Morris Wu

IPC分类号： H01L23/485 ,  H01L23/58

CPC分类号： H01L24/02 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/05042

摘要： A structure of a bond pad to prevent probe pin contamination is disclosed herein a first conductor layer is formed on the substrate. A passivation layer including a titanium nitride layer, a silicon nitride layer, and a silicon oxide layer is formed on the first conductor layer. A photoresist layer is patterned on the passivation layer to define a contact hole, and then etching the passivation layer using the photoresist layer as a mask to form the contact hole. A second conductor layer serving as a top metal of bond pad harder than the first conductor layer is selectively deposited on the first conductor layer, and filled in the contact hole. The present invention can reduce a probe pin contamination so that extend the probe pin lifetime using this selective deposition technique to form the pond pad structure. Additionally, the structure can prevent the contact resistance between the probe pin head and the bond pad increasing, and reduce the probe pin overkill ratio.

摘要翻译： 本文公开了一种用于防止探针引脚污染的接合焊盘的结构，其中在基板上形成第一导体层。 在第一导体层上形成包括氮化钛层，氮化硅层和氧化硅层的钝化层。 在钝化层上图案化光致抗蚀剂层以限定接触孔，然后使用光致抗蚀剂层作为掩模蚀刻钝化层以形成接触孔。 作为比第一导体层硬的接合垫的顶部金属的第二导体层选择性地沉积在第一导体层上，并填充在接触孔中。 本发明可以减少探针引脚污染，从而使用这种选择性沉积技术延长探针寿命以形成池塘结构。 此外，该结构可以防止探头针头和接合垫之间的接触电阻增加，并减少探针针的过度比。