公开(公告)号：US06184092B2

公开(公告)日：2001-02-06

申请号：US09444988

申请日：1999-11-23

Applicant: Mao-song Tseng ,  Rong-ching Chen ,  Su-wen Chang ,  Chin-lin Lin

Inventor： Mao-song Tseng ,  Rong-ching Chen ,  Su-wen Chang ,  Chin-lin Lin

IPC: H01L21336

Abstract: A method for forming a self-aligned contact for a trench DMOS transistor comprises: providing a semiconductor substrate; etching a trench into the semiconductor substrate at a selected location on the surface of the semiconductor substrate; forming a first dielectric layer that covers the semiconductor substrate and walls of the trench; forming a plug in the trench, which comprises a step of depositing a semiconductor layer that covers the semiconductor substrate and fills in the trench, and a step of etching the semiconductor layer until the plug is below the trench for about 0.2 to 0.3 micron; forming a second dielectric layer on the plug; and forming a conductive layer over the second dielectric layer and the surface of the semiconductor substrate for ohmic contact regions.

Abstract translation: 用于形成沟槽DMOS晶体管的自对准接触的方法包括：提供半导体衬底; 在所述半导体衬底的表面上的选定位置处将沟槽蚀刻到所述半导体衬底中; 形成覆盖半导体衬底和沟槽壁的第一介电层; 在沟槽中形成插塞，其包括沉积覆盖半导体衬底并填充在沟槽中的半导体层的步骤，以及蚀刻半导体层直到插塞在沟槽下方约0.2至0.3微米的步骤; 在所述插头上形成第二电介质层; 以及在第二电介质层和用于欧姆接触区域的半导体衬底的表面上形成导电层。

公开(公告)号：US5408806A

公开(公告)日：1995-04-25

申请号：US101410

申请日：1993-08-03

Applicant: Chin-Lin Lin ,  Shitsun Chen

Inventor： Chin-Lin Lin ,  Shitsun Chen

IPC: B65B9/06 ,  B65B9/00

CPC classification number: B65B9/06 ,  B65B2009/063

Abstract: A horizontal type of packing machine with an adjustable pouch former, in which a guide screw having half left-handed threads and half right-handed threads is used for adjusting the width of the pouch former; a cylindrical gear is in mesh with two gears to drive a left and a right gear racks and to simultaneously adjust the height of two guide plates on both sides of the machine in order to adjust the height of the pouch former. According to the design of replaceable paper-guiding plates, a user can select the proper paper-guiding plates in accordance with the products and the packing paper for the purpose of increasing the function of the pouch former; the metal plate parts are used for forming a near quadric chain assembly by means of a rotary connector so as to have such parts moved and adjusted upon the adjustment of the pouch width.

Abstract translation: 一种具有可调整袋形成器的水平式包装机，其中使用具有半个左旋螺纹和半个右旋螺纹的导向螺钉来调节该袋形成器的宽度; 圆筒形齿轮与两个齿轮啮合以驱动左右齿轮架并同时调节机器两侧的两个导板的高度，以便调节袋形架的高度。 根据可更换导纸板的设计，用户可以根据产品和包装纸选择合适的导纸板，目的是增加包装袋的功能; 金属板部件用于通过旋转连接器形成近二次链条组件，以便在调整袋宽度时使这些部件移动和调节。

公开(公告)号：US20060010166A1

公开(公告)日：2006-01-12

申请号：US11168481

申请日：2005-06-29

Applicant: Chin-Lin Lin ,  Huang-Yang Wu ,  Chih-Hao Chuang ,  Chia-Hsien Wang

Inventor： Chin-Lin Lin ,  Huang-Yang Wu ,  Chih-Hao Chuang ,  Chia-Hsien Wang

IPC: G06F17/00

CPC classification number: G06Q30/06

Abstract: The invention discloses a data processing system and method for managing production information associated with N1 electronic products requested according to a work order. N2 main devices are prepared based on the information of the work order and produced through a manufacturing line to produce N3 semi-products, and further through an assembling line to produce the N1 electronic products. Each of the main devices is provided with a respective first identification code at the start of the manufacturing line. Each of the semi-products is provided with a respective second identification code at the start of the assembling line. The system of the invention, based on the first identification code of each main device, records the operation information associated with said one main device produced through the equipments of the manufacturing line, and, based on the second identification code of each semi-product, records the operation information of said one semi-product produced through the equipments of the assembling line. The system and method of the invention further queries from the records and then displays the querying results.

Abstract translation: 本发明公开了一种用于管理根据工单所请求的N1电子产品相关联的生产信息的数据处理系统和方法。 N2主要设备是根据工单的信息制作而成，通过生产线生产N3半成品，并通过组装生产线生产N1电子产品。 每个主要装置在生产线的开始处设置有相应的第一识别码。 每个半产品在装配线的开始处设置有相应的第二识别码。 本发明的系统基于每个主设备的第一识别码，记录与通过生产线的设备生产的所述一个主设备相关联的操作信息，并且基于每个半成品的第二识别码， 记录通过装配线的设备生产的所述一种半成品的操作信息。 本发明的系统和方法进一步从记录查询，然后显示查询结果。

公开(公告)号：US06335260B1

公开(公告)日：2002-01-01

申请号：US09627136

申请日：2000-07-27

Applicant: Mao-song Tseng ,  Rong-ching Chen ,  Chin-lin Lin ,  Su-wen Chang

Inventor： Mao-song Tseng ,  Rong-ching Chen ,  Chin-lin Lin ,  Su-wen Chang

IPC: H01L2176

CPC classification number: H01L21/763 ,  G03F1/36

Abstract: In the invention, a photoresist layer is first spread on a semiconductor structure, and then using a photomask with a specially designed pattern exposes the photoresist layer. Next, the photoresist layer is developed to form a patterned photoresist layer. Thereafter, using the patterned photoresist layer as a mask, a trench is formed in the semiconductor structure by selective etching. The pattern of the photomask according to the invention is formed as in the following steps. At first, a first pattern extending in a first direction and having a first side and a second side that is opposite to the first side is formed. Next, a second pattern extending in a second direction that is perpendicular to the first direction is formed in such a way that an end of the second pattern is connected with the first side of the first pattern. Thereafter, a concave edge is formed on the second side to substantially face the second pattern. The distance between the first side and the second side is shortened due to the presence of the concave edge. As a result, the depth of the dimples developed at the intersection points of the dimple lines is greatly reduced when a polysilicon layer is deposited on the trench formed according to the invention.

Abstract translation: 在本发明中，光致抗蚀剂层首先在半导体结构上扩散，然后使用具有特殊设计图案的光掩模曝光光刻胶层。 接下来，将光致抗蚀剂层显影以形成图案化的光致抗蚀剂层。 此后，使用图案化的光致抗蚀剂层作为掩模，通过选择性蚀刻在半导体结构中形成沟槽。 根据本发明的光掩模的图案如以下步骤形成。 首先，形成沿第一方向延伸并具有与第一侧相反的第一侧和第二侧的第一图案。 接下来，沿着与第一方向垂直的第二方向延伸的第二图案形成为使得第二图案的端部与第一图案的第一侧连接。 此后，在第二侧上形成基本上面对第二图案的凹形边缘。 第一侧和第二侧之间的距离由于存在凹形边缘而缩短。 结果，当在根据本发明形成的沟槽上沉积多晶硅层时，在凹坑线的交点处产生的凹坑的深度大大减小。