METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20130323908A1

    公开(公告)日:2013-12-05

    申请号:US13483129

    申请日:2012-05-30

    IPC分类号: H01L21/78

    CPC分类号: B81C1/00873 H01L21/78

    摘要: A method for fabricating a semiconductor device, wherein the method comprises steps as follows: Firstly, a device wafer is provided and a patterned bonding layer is then formed within a scribe line region of the device wafer. Subsequently a handle wafer is bonded to the device wafer by the patterned bonding layer. Next, a dicing process is performed along the scribe line region in order to divide the device wafer into a plurality of dices and remove the patterned bonding layer simultaneously, whereby the divided dices can be separated from the handle wafer.

    摘要翻译: 一种制造半导体器件的方法,其中所述方法包括以下步骤:首先,提供器件晶片,然后在器件晶片的划线区域内形成图案化结合层。 随后,通过图案化的接合层将处理晶片结合到器件晶片。 接下来,沿着划线区域进行切割处理,以便将器件晶片分成多个骰子并同时移除图案化的接合层,从而可以将分割的骰子与手柄晶片分离。

    Method for fabricating semiconductor device
    2.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US08772136B2

    公开(公告)日:2014-07-08

    申请号:US13483129

    申请日:2012-05-30

    CPC分类号: B81C1/00873 H01L21/78

    摘要: A method for fabricating a semiconductor device, wherein the method comprises steps as follows: Firstly, a device wafer is provided and a patterned bonding layer is then formed within a scribe line region of the device wafer. Subsequently a handle wafer is bonded to the device wafer by the patterned bonding layer. Next, a dicing process is performed along the scribe line region in order to divide the device wafer into a plurality of dices and remove the patterned bonding layer simultaneously, whereby the divided dices can be separated from the handle wafer.

    摘要翻译: 一种制造半导体器件的方法,其中所述方法包括以下步骤:首先,提供器件晶片,然后在器件晶片的划线区域内形成图案化结合层。 随后,通过图案化的接合层将处理晶片结合到器件晶片。 接下来,沿着划线区域进行切割处理,以便将器件晶片分成多个骰子并同时移除图案化的接合层,从而可以将分割的骰子与手柄晶片分离。