公开(公告)号：US20070138140A1

公开(公告)日：2007-06-21

申请号：US11306053

申请日：2005-12-15

Applicant: Ching-Wen Teng ,  Chin-Kun Lin ,  Boon Neo

Inventor： Ching-Wen Teng ,  Chin-Kun Lin ,  Boon Neo

IPC: C03C15/00 ,  H01L21/461 ,  H01L21/302 ,  B44C1/22

CPC classification number: H01L22/26 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention is directed to a method for controlling a polishing process. The method comprises steps of providing a first wafer, wherein a thin film is located over the first wafer. A film average thickness distribution is obtained by measuring a plurality of thickness values of the thin film on a plurality regions over the wafer respectively. A removal rate recipe is determined according to the film average thickness distribution. A polishing process is performed according to the removal rate recipe.

Abstract translation: 本发明涉及一种用于控制抛光工艺的方法。 该方法包括提供第一晶片的步骤，其中薄膜位于第一晶片上方。 通过分别在晶片上的多个区域上测量薄膜的多个厚度值来获得膜平均厚度分布。 根据膜平均厚度分布确定去除率配方。 根据去除率配方进行抛光处理。

公开(公告)号：US07052376B1

公开(公告)日：2006-05-30

申请号：US10908785

申请日：2005-05-26

Applicant: Ming-Hsing Kao ,  Ching-Wen Teng ,  Chin-Kun Lin ,  Wee-Shiong Tan

Inventor： Ming-Hsing Kao ,  Ching-Wen Teng ,  Chin-Kun Lin ,  Wee-Shiong Tan

IPC: B24B7/00

CPC classification number: B24B37/30

Abstract: A wafer carrier gap washer includes at least one wafer carrier head and at least one nozzle installed on a wafer load/unload mechanism. The wafer carrier head has a flexible membrane and a retaining ring for holding a wafer beneath the wafer carrier head during a CMP process. The nozzle sprays fluid toward a gap between the flexible membrane and the retaining ring so as to wash the gap and remove slurry residues produced in the CMP process.

Abstract translation: 晶片载体间隙垫圈包括至少一个晶片承载头和安装在晶片装载/卸载机构上的至少一个喷嘴。 晶片承载头具有柔性膜和用于在CMP工艺期间将晶片保持在晶片承载头下方的保持环。 喷嘴朝向柔性膜和保持环之间的间隙喷射流体，以便清洗间隙并去除CMP工艺中产生的浆料残留物。

公开(公告)号：US07004820B1

公开(公告)日：2006-02-28

申请号：US10908814

申请日：2005-05-26

Applicant: Ching-Wen Teng ,  Ming-Hsing Kao ,  Chin-Kun Lin ,  Er-Yang Chua ,  Lee-Lee Lau

Inventor： Ching-Wen Teng ,  Ming-Hsing Kao ,  Chin-Kun Lin ,  Er-Yang Chua ,  Lee-Lee Lau

IPC: B24B29/00

CPC classification number: B24B37/04 ,  B24B55/00 ,  B24B57/02

Abstract: A method for chemical mechanical polishing (CMP) includes a rinsing process performed to clean an orifice of a slurry supplier and other elements of a CMP device. The CMP device includes least one nozzle disposed in the periphery of a base. The function of the nozzle is to spray DI water to the orifice of the slurry supplier so as to prevent slurry residue and clogging.

Abstract translation: 化学机械抛光（CMP）的方法包括清洗浆料供应商的孔口和CMP装置的其它元件的漂洗过程。 CMP装置包括设置在基部周边的至少一个喷嘴。 喷嘴的功能是将DI水喷雾到浆料供应商的孔口，以防止淤浆残留和堵塞。

公开(公告)号：US07432205B2

公开(公告)日：2008-10-07

申请号：US11306053

申请日：2005-12-15

Applicant: Ching-Wen Teng ,  Chin-Kun Lin ,  Boon Tiong Neo

Inventor： Ching-Wen Teng ,  Chin-Kun Lin ,  Boon Tiong Neo

IPC: H01L21/302

CPC classification number: H01L22/26 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention is directed to a method for controlling a polishing process. The method comprises steps of providing a first wafer, wherein a thin film is located over the first wafer. A film average thickness distribution is obtained by measuring a plurality of thickness values of the thin film on a plurality regions over the wafer respectively. A removal rate recipe is determined according to the film average thickness distribution. A polishing process is performed according to the removal rate recipe.

Abstract translation: 本发明涉及一种用于控制抛光工艺的方法。 该方法包括提供第一晶片的步骤，其中薄膜位于第一晶片上方。 通过分别在晶片上的多个区域上测量薄膜的多个厚度值来获得膜平均厚度分布。 根据膜平均厚度分布确定去除率配方。 根据去除率配方进行抛光处理。

公开(公告)号：US20080242198A1

公开(公告)日：2008-10-02

申请号：US11691190

申请日：2007-03-26

Applicant: Lee-Lee Lau ,  Chin-Kun Lin ,  Boon-Tiong Neo ,  Ching-Wen Teng

Inventor： Lee-Lee Lau ,  Chin-Kun Lin ,  Boon-Tiong Neo ,  Ching-Wen Teng

IPC: B24C1/00

CPC classification number: B24B1/00 ,  B24B37/013 ,  B24B37/04

Abstract: A multi-step planarizing and polishing method includes performing a first and a second polishing steps, wherein one of the two polishing steps is performed using a silica abrasive based slurry, while the other one of the two polishing steps is performed using a CeO2 abrasive based slurry. A third polishing step is further performed using a fixed abrasive pad. Further, the thickness deviation of wafers entering the third polishing step is controlled.

Abstract translation: 多步平面化和抛光方法包括进行第一和第二抛光步骤，其中两个抛光步骤之一使用二氧化硅研磨剂浆料进行，而两个抛光步骤中的另一个是使用CeO _{2 磨料基浆料。 使用固定的研磨垫进一步进行第三研磨步骤。 此外，控制进入第三研磨步骤的晶片的厚度偏差。}

公开(公告)号：US20070240734A1

公开(公告)日：2007-10-18

申请号：US11279754

申请日：2006-04-14

Applicant: Ching-Wen Teng ,  Chin-Kun Lin ,  Yu-Hsiang Tseng ,  Boon-Tiong Neo

Inventor： Ching-Wen Teng ,  Chin-Kun Lin ,  Yu-Hsiang Tseng ,  Boon-Tiong Neo

IPC: B08B3/12 ,  C23G1/02 ,  B08B3/00 ,  C23G1/00

CPC classification number: C23G1/103 ,  C11D11/0047 ,  C23G1/20 ,  H01L21/02074

Abstract: A post-CMP wafer is loaded into a buffer unit of a cleaning apparatus and is kept moist by adding a chemical. The post-CMP wafer is then loaded into a cleaning unit of the cleaning apparatus for performing the following cleaning process. The chemical added in the buffer unit is used to reduce the adhesion of benzotriazole (BTA) for improving the cleanliness of the post-CMP wafer.

Abstract translation: 后CMP晶片被装载到清洁装置的缓冲单元中，并通过添加化学品而保持湿润。 然后将CMP后的晶片装载到清洁装置的清洁单元中，以执行以下清洁处理。 缓冲单元中添加的化学物质用于降低苯并三唑（BTA）的粘附力，以提高CMP后的清洁度。