公开(公告)号：US12077681B2

公开(公告)日：2024-09-03

申请号：US17695022

申请日：2022-03-15

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Ji Ho Lee ,  Young Gi Lee ,  Soo Yeon Sim ,  Hyun Woo Lee ,  Chang Suk Lee ,  Jong Won Lee

IPC: C09G1/04 ,  B24B1/00 ,  B24B37/04 ,  C09G1/00 ,  C09G1/02 ,  C09G1/06 ,  C09K3/14 ,  C09K13/06 ,  H01L21/306 ,  B01J23/745 ,  B82Y40/00 ,  H01L21/304

CPC classification number: C09G1/04 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/06 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  B01J23/745 ,  B82Y40/00 ,  H01L21/304

Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition comprising a solvent; an abrasive agent; and a dendritic poly(amidoamine) containing a terminal functional group that has a pKa of about 6 or less.

公开(公告)号：US11945070B2

公开(公告)日：2024-04-02

申请号：US17289718

申请日：2020-04-17

Applicant: DALIAN UNIVERSITY OF TECHNOLOGY

Inventor： Ping Zhou ,  Zhichao Geng ,  Ying Yan ,  Lin Wang ,  Kai Wang ,  Dongming Guo

IPC: B24B1/00 ,  B24B29/02 ,  B24B41/04 ,  B24B49/12 ,  B24B55/06

CPC classification number: B24B1/00 ,  B24B29/02 ,  B24B41/04 ,  B24B49/12 ,  B24B55/06

Abstract: A rocker polishing apparatus for full-aperture deterministic polishing of a planar part includes a control system, a substrate, a lifting plate, a polishing module and a measuring module. The polishing module and the measuring module are arranged on the substrate. The lifting plate is arranged between the polishing module and the measuring module. The polishing module includes a rocker mechanism, a polishing pad surface dressing mechanism, a polishing pad surface profile measuring apparatus and a continuous polishing pad mechanism. The apparatus allows the material removal rate distribution of the planar part and the surface profile of the planar part be in the normalized mirror symmetry relationship by controlling the material removal rate distribution on the surface of the planar part, thereby implementing the deterministic polishing of the planar part and ensuring the efficient convergence of the surface profile of the planar part in the polishing process.

公开(公告)号：US20240058904A1

公开(公告)日：2024-02-22

申请号：US18500223

申请日：2023-11-02

Applicant: BLADE DIAGNOSTICS CORPORATION

Inventor： Jerry H. Griffin ,  Drew M. Feiner ,  Blair E. Echols ,  Michael J. Cushman ,  Alex J. Kowalski ,  Daniel J. Ryan

IPC: B23P6/00 ,  B24B1/00 ,  F01D5/10

CPC classification number: B23P6/002 ,  B24B1/00 ,  F01D5/10 ,  F05D2230/72 ,  F05D2230/80 ,  F05D2260/83

Abstract: A method and apparatus for maintaining integrally bladed rotors (IBR) includes using first vibration data from a IBR vibration apparatus of a first IBR to determine a set of values for a corresponding set of inherent vibratory properties based on a reduced order model for an IBR type to which the first IBR belongs. Shape data indicating an initial shape of a surface of a first blade is used, with repair data that indicates a candidate repair to form a restored shape, to determine a change in a value of an inherent blade section vibratory property of the set of inherent vibratory properties. A condition of the first IBR is determined based at least in part on the change in the value of the inherent blade section vibratory property. The first IBR is maintained based on the condition.

公开(公告)号：US20240043721A1

公开(公告)日：2024-02-08

申请号：US18381516

申请日：2023-10-18

Applicant: Tokyo Electron Limited

Inventor： Paul Abel

IPC: C09G1/02 ,  H01L21/321 ,  C09K13/02 ,  C09K13/00 ,  B24B37/04 ,  C09G1/06 ,  B24B1/00 ,  C09K3/14 ,  C09K13/06 ,  H01L21/306 ,  C09G1/04

CPC classification number: C09G1/02 ,  H01L21/3212 ,  C09K13/02 ,  C09K13/00 ,  B24B37/044 ,  C09G1/06 ,  B24B1/00 ,  C09K3/1454 ,  C09K13/06 ,  H01L21/30625 ,  C09G1/04

Abstract: The present disclosure provides a new corrosion control chemistry for use in ruthenium (Ru) chemical-mechanical polishing (CMP) processes. More specifically, the present disclosure provides an improved CMP slurry chemistry and CMP process for planarizing a ruthenium surface. In the CMP process disclosed herein, a ruthenium surface (e.g., a post-etch ruthenium surface) is exposed to a CMP slurry containing a halogenation reagent, which reacts with the ruthenium surface to create a halogenated ruthenium surface, and a ligand for ligand-assisted reactive dissolution of the halogenated ruthenium surface. Relative amounts of the halogenation agent and the ligand can be controlled in the CMP slurry, so as to provide a diffusion-limited etch process that improves pos-etch surface morphology, while providing high material removal rates.

公开(公告)号：US11806836B2

公开(公告)日：2023-11-07

申请号：US17543642

申请日：2021-12-06

Applicant: Illumina, Inc.

Inventor： Robert Yang ,  Samantha K. Brittelle ,  You-Jung Cheng ,  Scott William Bailey ,  James M. Tsay

IPC: B24C1/08 ,  C09G1/02 ,  C09K3/14 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K13/06 ,  B24B1/00 ,  B24B37/04 ,  H01L21/321 ,  H01L21/306

CPC classification number: B24C1/08 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/3212

Abstract: A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surfactant. The concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %.

公开(公告)号：US11787010B2

公开(公告)日：2023-10-17

申请号：US17381242

申请日：2021-07-21

Applicant: Karl Heesemann Maschinenfabrik GmbH & Co. KG

Inventor： Christoph Giese

IPC: B24B49/12 ,  B24B1/00 ,  B24B49/04 ,  G06T7/00

CPC classification number: B24B49/12 ,  B24B1/00 ,  B24B49/04 ,  G06T7/001

Abstract: Grinding a surface of a workpieces is accomplished with a grinding machine having at least two grinding units. First, a target structure of the surface to be achieved is provided. Then, using predetermined grinding parameters, a first of the two grinding units is used to grind the surface of the structure. Then, the surface of the actual structure is captured and compared to the target structure. Based on the comparison, the grinding parameters are adjusted and the surface is then ground, using the adjusted parameters, with the second of the two grinding units.

公开(公告)号：US11731230B2

公开(公告)日：2023-08-22

申请号：US16332206

申请日：2018-09-21

Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Masahiro Fujita ,  Koji Nishioka

IPC: C23C14/34 ,  B24B29/02 ,  B24B1/00 ,  C23C14/02

CPC classification number: B24B29/02 ,  B24B1/00 ,  C23C14/028 ,  C23C14/3414

Abstract: A sputtering target that is less likely to cause abnormal discharge is manufactured. A method for manufacturing a sputtering target includes performing multi-stage polishing on a sputtering surface of a target material having a Vickers hardness of 100 or less being made of metal by using a plurality of abrasives having different grit numbers in ascending order of grit number from a small grit number to a large grit number.

公开(公告)号：US11718767B2

公开(公告)日：2023-08-08

申请号：US16533381

申请日：2019-08-06

Applicant: Versum Materials US, LLC

Inventor： Ming-Shih Tsai ,  Chia-Chien Lee ,  Rung-Je Yang ,  Anu Mallikarjunan ,  Chris Keh-Yeuan Li ,  Hongjun Zhou ,  Joseph D. Rose ,  Xiaobo Shi

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/306 ,  C09K3/14 ,  B24B37/04 ,  B24B1/00 ,  C09G1/06 ,  C09G1/04 ,  C09G1/00 ,  C09K13/04

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/00 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212 ,  C09K13/04

Abstract: Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.

公开(公告)号：US11713404B2

公开(公告)日：2023-08-01

申请号：US17318421

申请日：2021-05-12

Applicant: AGC INC.

Inventor： Toshihiko Otsuki

IPC: C09G1/02 ,  H01L21/321 ,  C09G1/00 ,  C09G1/06 ,  C09K3/14 ,  C09G1/04 ,  C09K13/06 ,  B24B37/04 ,  B24B1/00 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/304 ,  H01L21/762

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76224

Abstract: The present invention relates to a polishing agent including: a water-soluble polymer including a copolymer of a monomer (A) which includes at least one member selected from the group consisting of an unsaturated dicarboxylic acid, a derivative thereof, and salts of the unsaturated dicarboxylic acid and the derivative thereof and a monomer (B) other than the monomer (A), comprising an ethylenic double bond and no acidic group; a cerium oxide particle; and water, in which the polishing agent has a pH of 4 to 9.

公开(公告)号：US20190202734A1

公开(公告)日：2019-07-04

申请号：US16131112

申请日：2018-09-14

Applicant: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP., LTD.

Inventor： Xiaowei WANG

IPC: C03C21/00 ,  C03C19/00 ,  C03C23/00

CPC classification number: C03C21/002 ,  B24B1/00 ,  C03C19/00 ,  C03C23/0075 ,  C03C2203/50 ,  C03C2217/78

Abstract: A method for producing reinforced glass, reinforced glass and an electronic device are provided. The method for producing reinforced glass includes: subjecting glass to a first reinforcing treatment; detecting a first stress parameter of the glass subjected to the first reinforcing treatment, and determining whether the glass subjected to the first reinforcing treatment is qualified according to the first stress parameter; subjecting the glass to a second reinforcing treatment when the glass subjected to the first reinforcing treatment is qualified; detecting a second stress parameter of the glass subjected to the second reinforcing treatment, and determining whether the glass subjected to the second reinforcing treatment is qualified according to the second stress parameter; and subjecting the glass to a touch-polishing treatment when the glass subjected to the second reinforcing treatment is qualified, so as to obtain the reinforced glass.